RD3P130SP MOSFET. Datasheet pdf. Equivalent
Type Designator: RD3P130SP
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 40 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO-252
RD3P130SP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RD3P130SP Datasheet (PDF)
rd3p130sp.pdf
RD3P130SPDatasheetPch -100V -13A Power MOSFETlOutlinelVDSS-100V DPAKRDS(on)(Max.)200m TO-252ID13APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationsl
rd3p130sp.pdf
isc P-Channel MOSFET Transistor RD3P130SPFEATURESDrain Current I = -13A@ T =25D CDrain Source Voltage-: V = -100V(Min)DSSStatic Drain-Source On-Resistance: R = 200m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
rd3p175sn.pdf
RD3P175SNDatasheetNch 100V 17.5A Power MOSFETlOutlinelVDSS100V DPAKRDS(on)(Max.)105m TO-252ID17.5APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationsl
rd3p100sn.pdf
RD3P100SNDatasheetNch 100V 10A Power MOSFETlOutlinelVDSS100V DPAKRDS(on)(Max.)133m TO-252ID10APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmb
rd3p175sn.pdf
isc N-Channel MOSFET Transistor RD3P175SNFEATURESDrain Current I = 17.5A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 105m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
rd3p100sn.pdf
isc N-Channel MOSFET Transistor RD3P100SNFEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 133m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: NTD2955VT4G
