RD3P130SP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RD3P130SP
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 20 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 13 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 40 nC
Время нарастания (tr): 25 ns
Выходная емкость (Cd): 100 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.2 Ohm
Тип корпуса: TO-252
RD3P130SP Datasheet (PDF)
rd3p130sp.pdf
RD3P130SPDatasheetPch -100V -13A Power MOSFETlOutlinelVDSS-100V DPAKRDS(on)(Max.)200m TO-252ID13APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationsl
rd3p130sp.pdf
isc P-Channel MOSFET Transistor RD3P130SPFEATURESDrain Current I = -13A@ T =25D CDrain Source Voltage-: V = -100V(Min)DSSStatic Drain-Source On-Resistance: R = 200m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
rd3p175sn.pdf
RD3P175SNDatasheetNch 100V 17.5A Power MOSFETlOutlinelVDSS100V DPAKRDS(on)(Max.)105m TO-252ID17.5APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationsl
rd3p100sn.pdf
RD3P100SNDatasheetNch 100V 10A Power MOSFETlOutlinelVDSS100V DPAKRDS(on)(Max.)133m TO-252ID10APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmb
rd3p175sn.pdf
isc N-Channel MOSFET Transistor RD3P175SNFEATURESDrain Current I = 17.5A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 105m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
rd3p100sn.pdf
isc N-Channel MOSFET Transistor RD3P100SNFEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 133m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
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