Справочник MOSFET. RD3P130SP

 

RD3P130SP MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RD3P130SP
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 20 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 40 nC
   trⓘ - Время нарастания: 25 ns
   Cossⓘ - Выходная емкость: 100 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.2 Ohm
   Тип корпуса: TO-252

 Аналог (замена) для RD3P130SP

 

 

RD3P130SP Datasheet (PDF)

 ..1. Size:1640K  rohm
 rd3p130sp.pdf

RD3P130SP RD3P130SP

RD3P130SPDatasheetPch -100V -13A Power MOSFETlOutlinelVDSS-100V DPAKRDS(on)(Max.)200m TO-252ID13APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationsl

 ..2. Size:265K  inchange semiconductor
 rd3p130sp.pdf

RD3P130SP RD3P130SP

isc P-Channel MOSFET Transistor RD3P130SPFEATURESDrain Current I = -13A@ T =25D CDrain Source Voltage-: V = -100V(Min)DSSStatic Drain-Source On-Resistance: R = 200m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 9.1. Size:1590K  rohm
 rd3p175sn.pdf

RD3P130SP RD3P130SP

RD3P175SNDatasheetNch 100V 17.5A Power MOSFETlOutlinelVDSS100V DPAKRDS(on)(Max.)105m TO-252ID17.5APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationsl

 9.2. Size:1587K  rohm
 rd3p100sn.pdf

RD3P130SP RD3P130SP

RD3P100SNDatasheetNch 100V 10A Power MOSFETlOutlinelVDSS100V DPAKRDS(on)(Max.)133m TO-252ID10APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmb

 9.3. Size:265K  inchange semiconductor
 rd3p175sn.pdf

RD3P130SP RD3P130SP

isc N-Channel MOSFET Transistor RD3P175SNFEATURESDrain Current I = 17.5A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 105m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

 9.4. Size:265K  inchange semiconductor
 rd3p100sn.pdf

RD3P130SP RD3P130SP

isc N-Channel MOSFET Transistor RD3P100SNFEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 133m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

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