All MOSFET. RD3P200SN Datasheet

 

RD3P200SN Datasheet and Replacement


   Type Designator: RD3P200SN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: TO-252
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RD3P200SN Datasheet (PDF)

 ..1. Size:1628K  rohm
 rd3p200sn.pdf pdf_icon

RD3P200SN

RD3P200SNDatasheetNch 100V 20A Power MOSFETlOutlinelVDSS100V DPAKRDS(on)(Max.)46m TO-252ID20APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbo

 ..2. Size:265K  inchange semiconductor
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RD3P200SN

isc N-Channel MOSFET Transistor RD3P200SNFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 46m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 0.1. Size:1585K  rohm
 rd3p200snfra.pdf pdf_icon

RD3P200SN

RD3P200SNFRADatasheetNch 100V 20A Power MOSFETlOutlinelVDSS100V DPAKRDS(on)(Max.)46m TO-252ID20APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliant6) AEC-Q101 QualifiedlPackagi

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: R6504KNX | R9522

Keywords - RD3P200SN MOSFET datasheet

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