RD3P200SN Specs and Replacement
Type Designator: RD3P200SN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
Package: TO-252
RD3P200SN substitution
- MOSFET ⓘ Cross-Reference Search
RD3P200SN datasheet
rd3p200sn.pdf
RD3P200SN Datasheet Nch 100V 20A Power MOSFET lOutline l VDSS 100V DPAK RDS(on)(Max.) 46m TO-252 ID 20A PD 20W lInner circuit l lFeatures l 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating ; RoHS compliant lPackaging specifications l Embo... See More ⇒
rd3p200sn.pdf
isc N-Channel MOSFET Transistor RD3P200SN FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 46m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp... See More ⇒
rd3p200snfra.pdf
RD3P200SNFRA Datasheet Nch 100V 20A Power MOSFET lOutline l VDSS 100V DPAK RDS(on)(Max.) 46m TO-252 ID 20A PD 20W lInner circuit l lFeatures l 1) Low on - resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free lead plating ; RoHS compliant 6) AEC-Q101 Qualified lPackagi... See More ⇒
Detailed specifications: RD3L08CGN, RD3L140SP, RD3L150SN, RD3L220SN, RD3P050SN, RD3P100SN, RD3P130SP, RD3P175SN, K2611, RD3S075CN, RD3S100CN, RD3T050CN, RD3T075CN, RD3T100CN, RD3U040CN, RD3U060CN, RD3U080CN
Keywords - RD3P200SN MOSFET specs
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