All MOSFET. RD3P200SN Datasheet

 

RD3P200SN Datasheet and Replacement


   Type Designator: RD3P200SN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: TO-252
 

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RD3P200SN Datasheet (PDF)

 ..1. Size:1628K  rohm
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RD3P200SN

RD3P200SNDatasheetNch 100V 20A Power MOSFETlOutlinelVDSS100V DPAKRDS(on)(Max.)46m TO-252ID20APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliantlPackaging specificationslEmbo

 ..2. Size:265K  inchange semiconductor
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RD3P200SN

isc N-Channel MOSFET Transistor RD3P200SNFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 46m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

 0.1. Size:1585K  rohm
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RD3P200SN

RD3P200SNFRADatasheetNch 100V 20A Power MOSFETlOutlinelVDSS100V DPAKRDS(on)(Max.)46m TO-252ID20APD20W lInner circuitllFeaturesl1) Low on - resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free lead plating ; RoHS compliant6) AEC-Q101 QualifiedlPackagi

Datasheet: RD3L08CGN , RD3L140SP , RD3L150SN , RD3L220SN , RD3P050SN , RD3P100SN , RD3P130SP , RD3P175SN , IRF9640 , RD3S075CN , RD3S100CN , RD3T050CN , RD3T075CN , RD3T100CN , RD3U040CN , RD3U060CN , RD3U080CN .

History: IRHMJ7250 | IRFPC48 | STP7407 | AP15P15GM-HF | PMV15UNEA | AP15P15GP-HF | BSC057N03MS

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