All MOSFET. RD3S075CN Datasheet

 

RD3S075CN Datasheet and Replacement


   Type Designator: RD3S075CN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 190 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 30 nC
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.336 Ohm
   Package: TO-252
 

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RD3S075CN Datasheet (PDF)

 ..1. Size:1527K  rohm
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RD3S075CN

RD3S075CNDatasheetNch 190V 7.5A Power MOSFETlOutlinel TO-252VDSS190VRDS(on)(Max.) 336mID 7.5APD52W lFeaturesllInner circuitl1) Low on-resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free plating ; RoHS compliantlApplicationllPackaging spec

 ..2. Size:266K  inchange semiconductor
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RD3S075CN

isc N-Channel MOSFET Transistor RD3S075CNFEATURESDrain Current I = 7.5A@ T =25D CDrain Source Voltage-: V = 190V(Min)DSSStatic Drain-Source On-Resistance: R = 336m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

Datasheet: RD3L140SP , RD3L150SN , RD3L220SN , RD3P050SN , RD3P100SN , RD3P130SP , RD3P175SN , RD3P200SN , 2SK3918 , RD3S100CN , RD3T050CN , RD3T075CN , RD3T100CN , RD3U040CN , RD3U060CN , RD3U080CN , FHP12N60 .

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