RD3T075CN Datasheet and Replacement. Cross Reference Search

RD3T075CN Datasheet (PDF)

..1. Size:3540K rohm
rd3t075cn.pdf pdf_icon

RD3T075CNDatasheetNch 200V 7.5A Power MOSFETlOutlinelVDSS 200V DPAKRDS(on)(Max.) 325m TO-252ID 7.5APD 52WlInner circuitllFeaturesl1) Low on-resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free plating ; RoHS compliantlPackaging specificationslEmbossed PackingTape Reel size (mm) 330lApplication

..2. Size:265K inchange semiconductor
rd3t075cn.pdf pdf_icon

isc N-Channel MOSFET Transistor RD3T075CNFEATURESDrain Current I = 7.5A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 325m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

9.1. Size:1474K rohm
rd3t050cn.pdf pdf_icon

RD3T050CNDatasheetNch 200V 5A Power MOSFETlOutlinelVDSS 200V DPAKRDS(on)(Max.) 760m TO-252ID 5APD 29W lInner circuitllFeaturesl1) Low on-resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free plating ; RoHS compliantlPackaging specificationslEmbossed Packi

9.2. Size:265K inchange semiconductor
rd3t050cn.pdf pdf_icon

isc N-Channel MOSFET Transistor RD3T050CNFEATURESDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 760m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .