RD3U040CN
MOSFET. Datasheet pdf. Equivalent
Type Designator: RD3U040CN
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 29
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8.5
nC
trⓘ - Rise Time: 14
nS
Cossⓘ -
Output Capacitance: 30
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3
Ohm
Package:
TO-252
RD3U040CN
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RD3U040CN
Datasheet (PDF)
..1. Size:1490K rohm
rd3u040cn.pdf 
RD3U040CNDatasheetNch 250V 4A Power MOSFETlOutlinelVDSS 250V DPAKRDS(on)(Max.) 1300m TO-252ID 4APD 29W lInner circuitllFeaturesl1) Low on-resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free plating ; RoHS compliantlPackaging specificationslEmbossed Pack
..2. Size:265K inchange semiconductor
rd3u040cn.pdf
isc N-Channel MOSFET Transistor RD3U040CNFEATURESDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 42m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo
9.1. Size:1498K rohm
rd3u080cn.pdf
RD3U080CNDatasheetNch 250V 8A Power MOSFETlOutlinelVDSS 250V DPAKRDS(on)(Max.) 300m TO-252ID 8APD 85W lInner circuitllFeaturesl1) Low on-resistance2) Fast switching3) Drive circuits can be simple4) Parallel use is easy5) Pb-free plating ; RoHS compliantlPackaging specificationslEmbossed PackingTa
9.2. Size:1502K rohm
rd3u060cn.pdf
RD3U060CNDatasheetNch 250V 6A Power MOSFETlOutlinelVDSS 250V DPAKRDS(on)(Max.) 530m TO-252ID 6APD 52W lInner circuitllFeaturesl1) Low on-resistance2) Fast switching speed3) Drive circuits can be simple4) Parallel use is easy5) Pb-free plating ; RoHS compliantlPackaging specificationslEmbossed Packi
9.3. Size:265K inchange semiconductor
rd3u080cn.pdf
isc N-Channel MOSFET Transistor RD3U080CNFEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 300m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
9.4. Size:265K inchange semiconductor
rd3u060cn.pdf
isc N-Channel MOSFET Transistor RD3U060CNFEATURESDrain Current I = 6A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 530m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp
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