All MOSFET. FHP12N60 Datasheet

 

FHP12N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FHP12N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO-220

 FHP12N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FHP12N60 Datasheet (PDF)

 ..1. Size:158K  1
fhp12n60.pdf

FHP12N60
FHP12N60

FHP12N60FHP12N60 N MOSAC-DCDC-DCHPMW 12A,600V,RDS(on)(0.6 TC=25 VDS

 0.1. Size:784K  feihonltd
fhp12n60a fhf12n60a.pdf

FHP12N60
FHP12N60

N N-CHANNEL MOSFET FHP12N60A/ FHF12N60A MAIN CHARACTERISTICS FEATURES Low gate charge ID 12A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 600V Fast switching Rdson-typ 0.6 @Vgs=10V 100% 100% avalanche tested Qg-typ 52nC dv/dt Im

 7.1. Size:782K  feihonltd
fhp12n65c fhf12n65c.pdf

FHP12N60
FHP12N60

N N-CHANNEL MOSFET FHP12N65C/ FHF12N65C MAIN CHARACTERISTICS FEATURES Low gate charge ID 12A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 650V Fast switching Rdson-typ 0.63 @Vgs=10V 100% 100% avalanche tested Qg-typ 52nC dv/dt I

 9.1. Size:802K  feihonltd
fhp120n08d.pdf

FHP12N60
FHP12N60

N N-CHANNEL MOSFET FHP120N08D MAIN CHARACTERISTICS FEATURES ID 120 A Low gate charge VDSS 80 V Crss ( 190pF) Low Crss (typical 190pF ) Rdson-typ @Vgs=10V 6.0 m Fast switching Qg-typ 60nC 100% 100% avalanche tested dv/dt Improve

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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