FHP12N60
MOSFET. Datasheet pdf. Equivalent
Type Designator: FHP12N60
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 180
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7
Ohm
Package:
TO-220
FHP12N60
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FHP12N60
Datasheet (PDF)
..1. Size:158K 1
fhp12n60.pdf
FHP12N60FHP12N60 N MOSAC-DCDC-DCHPMW 12A,600V,RDS(on)(0.6 TC=25 VDS
0.1. Size:784K feihonltd
fhp12n60a fhf12n60a.pdf
N N-CHANNEL MOSFET FHP12N60A/ FHF12N60A MAIN CHARACTERISTICS FEATURES Low gate charge ID 12A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 600V Fast switching Rdson-typ 0.6 @Vgs=10V 100% 100% avalanche tested Qg-typ 52nC dv/dt Im
7.1. Size:782K feihonltd
fhp12n65c fhf12n65c.pdf
N N-CHANNEL MOSFET FHP12N65C/ FHF12N65C MAIN CHARACTERISTICS FEATURES Low gate charge ID 12A Crss ( 18pF) Low Crss (typical 18pF ) VDSS 650V Fast switching Rdson-typ 0.63 @Vgs=10V 100% 100% avalanche tested Qg-typ 52nC dv/dt I
9.1. Size:802K feihonltd
fhp120n08d.pdf
N N-CHANNEL MOSFET FHP120N08D MAIN CHARACTERISTICS FEATURES ID 120 A Low gate charge VDSS 80 V Crss ( 190pF) Low Crss (typical 190pF ) Rdson-typ @Vgs=10V 6.0 m Fast switching Qg-typ 60nC 100% 100% avalanche tested dv/dt Improve
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