All MOSFET. FL6L52010L Datasheet

 

FL6L52010L MOSFET. Datasheet pdf. Equivalent


   Type Designator: FL6L52010L
   Marking Code: Y1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 85 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: WSSMINI6-F1

 FL6L52010L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FL6L52010L Datasheet (PDF)

 ..1. Size:288K  1
 fl6l52010l.pdf

FL6L52010L FL6L52010L

Doc No. TT4-EA-12746Revision. 2Product StandardsMOS FETFL6L52010LFL6L52010LSilicon P-channel MOSFET(FET)Unit : mm Silicon epitaxial planar type(SBD)1.6For switching0.2 0.13For DC-DC Converter6 5 4 Features Low drain-source ON resistance : RDS (on) typ. = 80 m ( VGS = -4.0 V ) Low drive voltage : 1.8 V drive Halogen-free / RoHS compliant(EU RoHS

 6.1. Size:486K  panasonic
 fl6l5201.pdf

FL6L52010L FL6L52010L

This product complies with the RoHS Directive (EU 2002/95/EC).FL6L5201Silicon P-channel MOS FET (FET)Silicon epitaxial planar type (SBD)For switching circuitsFor DC-DC converter circuits Overview PackageFL6L5201 is P-channel single type small signal MOS FET with SBD Codeemployed small size surface mounting package. WSSMini6-F1Package dimension clicks here. Click!

 7.1. Size:370K  panasonic
 fl6l5207.pdf

FL6L52010L FL6L52010L

Doc No. TT4-EA-13067Revision. 2Product StandardsMOS FETFL6L52070LFL6L52070LSilicon P-channel MOSFET(FET)Unit : mm Silicon epitaxial planar type(SBD)1.6For switching0.2 0.13For DC-DC Converter6 5 4 Features Low drain-source ON resistance : RDS (on) typ. = 300 m ( VGS = -4.0 V ) Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant(EU RoH

 7.2. Size:339K  panasonic
 fl6l5206.pdf

FL6L52010L FL6L52010L

Doc No. TT4-EA-13066Revision. 2Product StandardsMOS FETFL6L52060LFL6L52060LSilicon P-channel MOSFET(FET)Unit : mm Silicon epitaxial planar type(SBD)1.6For switching0.2 0.13For DC-DC Converter6 5 4 Features Low drain-source ON resistance : RDS (on) typ. = 80 m ( VGS = -4.0 V ) Low drive voltage : 1.8 V drive Halogen-free / RoHS compliant(EU RoHS / UL-94

 7.3. Size:320K  panasonic
 fl6l5203.pdf

FL6L52010L FL6L52010L

This product complies with the RoHS Directive (EU 2002/95/EC).FL6L5203Silicon P-channel MOS FET (FET)Silicon epitaxial planar type (SBD)For DC-DC converter circuitsFor switching circuits Overview PackageFL6L5203 is P-channel type MOS FET with Schottky Brrier Diode in small Codesize surface mouting pakcage. WSSMini6-F1 Package dimension clicks here.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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