AP2302B Datasheet and Replacement
Type Designator: AP2302B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 2.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: SOT23
AP2302B substitution
AP2302B Datasheet (PDF)
ap2302gn-hf.pdf

AP2302GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V gate drive BVDSS 20V Small package outline D RDS(ON) 85m Surface mount package ID 3.2A RoHS CompliantSSOT-23GDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Dlow on-resistanc
ap2302n-hf.pdf

AP2302N-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 64m Surface Mount Package ID 3.2AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resista
ap2302agn.pdf

AP2302AGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Lower Gate Charge RDS(ON) 42m Surface Mount Package ID 4.6AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2302A series are from Advanced Power innovated design andsilicon process technology to achieve the l
Datasheet: AP120N03K , AP15N10 , AP15P03Q , AP2045K , AP2080K , AP2300 , AP2301 , AP2302 , IRFB4227 , AP2305 , AP2310S , AP2312 , AP2N7002 , AP3010 , AP3020 , AP30H100KA , AP30H150KA .
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