AP3400S
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP3400S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4
V
|Id|ⓘ - Maximum Drain Current: 5.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 4.8
nS
Cossⓘ -
Output Capacitance: 99
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.032
Ohm
Package:
SOT23
AP3400S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP3400S
Datasheet (PDF)
..1. Size:1290K allpower
ap3400s.pdf
AIIP ERAP3400S DATA SHEET N-Channel pwer MOSFETI Descriptions N MOS N- CHA NNEL MOSFET in a SOT23 Plastic Package. SOT23 oI Features V s(V) = 30V oA lo = 5.8 (VGs = 10V) s 2Ro coN)
9.1. Size:72K ape
ap3403gh ap3403gj.pdf
AP3403GH/JPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow Gate Charge BVDSS -30V DSimple Drive Requirement RDS(ON) 200m Fast Switching ID - 10A GSDescriptionGDSAdvanced Power MOSFETs utilized advanced processing techniques to TO-252(H)achieve the lowest poss
9.2. Size:62K ape
ap3402geh ap3402gej.pdf
AP3402GEH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 35VD Single Drive Requirement RDS(ON) 18m Surface Mount Package ID 38AG RoHS CompliantSDescriptionThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device de
9.3. Size:93K ape
ap3405gh-hf.pdf
AP3405GH-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower Gate Charge BVDSS -30V Simple Drive Requirement RDS(ON) 90m Fast Switching Characteristic ID -8.6AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching, TO
9.5. Size:1473K allpower
ap3407s.pdf
AP3407S / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features VDS (V) = -30V ID = -4.1 A RDS(ON)
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