AP3400S - Даташиты. Аналоги. Основные параметры

AIIP ERAP3400S DATA SHEET N-Channel pwer MOSFETI Descriptions N MOS N- CHA NNEL MOSFET in a SOT23 Plastic Package. SOT23 oI Features V s(V) = 30V oA lo = 5.8 (VGs = 10V) s 2Ro coN)

AP3400MI-L 30V N-Channel Enhancement Mode MOSFET Description The AP3400MI-LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS DR

AP3400BI 30V N-Channel Enhancement Mode MOSFET Description The AP3400BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS DR

AP3400DI 20V N-Channel Enhancement Mode MOSFET Description The AP3400DI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =3.2A DS DR

AP3400AI 30V N-Channel Enhancement Mode MOSFET Description The AP3400AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS DR

AP3400CI 30V N-Channel Enhancement Mode MOSFET Description The AP3400CI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =4.2A DS DR

AP3400MI 30V N-Channel Enhancement Mode MOSFET Description The AP3400MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS DR