AP4606CS Datasheet and Replacement
Type Designator: AP4606CS
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.1 nS
Cossⓘ - Output Capacitance: 102 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOP8
AP4606CS substitution
AP4606CS Datasheet (PDF)
ap4606cs.pdf
AP4606CS / Descriptions SOP-8 MOS Complementary Enhancement MOSFET in a SOP-8 Plastic Package. / Features N-channel P-channelVDS(V)=30V VDS(V)=-30V ID=6.9A ID=-6A RDS(ON)
ap4606c.pdf
AP4606C 20V N+P-Channel Enhancement Mode MOSFET Description The AP4606C uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.5A DS DR
ap4606p.pdf
AP4606PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 3.7m Fast Switching Characteristic ID3 125AG RoHS Compliant & Halogen-FreeSDescriptionAP4606 series are from Advanced Power innovated designand silicon process technology to achieve the lowes
ap4606b.pdf
AP4606B 30V N+P-Channel Enhancement Mode MOSFET Description The AP4606B uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =6.2A DS DR
Datasheet: AP30P30Q , AP3400 , AP3400S , AP3401 , AP3407 , AP3407S , AP4435 , AP4438 , IRF9540N , AP4616 , AP4953 , AP55N03 , AP8205 , AP8205A , AP83T03K , AP8810 , AP9926 .
History: NTMFD4C87N
Keywords - AP4606CS MOSFET datasheet
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History: NTMFD4C87N
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