All MOSFET. AP8205 Datasheet

 

AP8205 Datasheet and Replacement


   Type Designator: AP8205
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: SOT23-6
 

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AP8205 Datasheet (PDF)

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AP8205

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 ap8205a.pdf pdf_icon

AP8205

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 ap8205a-21.pdf pdf_icon

AP8205

AP8205A-21 20V N+N-Channel Enhancement Mode MOSFET Description The AP8205A-21 uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =6.5A DS DR

 0.3. Size:681K  cn apm
 ap8205s.pdf pdf_icon

AP8205

AP8205S 20V N+N Channel Enhancement Mode MOSFET Description The AP8205S uses advanced trench technology to provide excellent R , low gate charge DS(ON)and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V, ID = 6A RDS(ON)

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Datasheet: AP3407 , AP3407S , AP4435 , AP4438 , AP4606CS , AP4616 , AP4953 , AP55N03 , K3569 , AP8205A , AP83T03K , AP8810 , AP9926 , BR4407 , ATM2301PSA , ATM2302BNSA , ATM2306NSA .

History: NTMFD4901NF | FDS6930A

Keywords - AP8205 MOSFET datasheet

 AP8205 cross reference
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