AP8205 MOSFET Datasheet: N-Ch, 20V, 6A. Full specification with pinout and replacement list

AP8205 Specs and Replacement

Type Designator: AP8205

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.14 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 70 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: SOT23-6

AP8205 substitution

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AP8205 datasheet

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AP8205A-21 20V N+N-Channel Enhancement Mode MOSFET Description The AP8205A-21 uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =6.5A DS D R ... See More ⇒

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AP8205S 20V N+N Channel Enhancement Mode MOSFET Description The AP8205S uses advanced trench technology to provide excellent R , low gate charge DS(ON) and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V, ID = 6A RDS(ON) ... See More ⇒

Detailed specifications: AP3407, AP3407S, AP4435, AP4438, AP4606CS, AP4616, AP4953, AP55N03, K3569, AP8205A, AP83T03K, AP8810, AP9926, BR4407, ATM2301PSA, ATM2302BNSA, ATM2306NSA