AP8205A Specs and Replacement
Type Designator: AP8205A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 320 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: TSSOP8
AP8205A substitution
- MOSFET ⓘ Cross-Reference Search
AP8205A datasheet
ap8205a-21.pdf
AP8205A-21 20V N+N-Channel Enhancement Mode MOSFET Description The AP8205A-21 uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =6.5A DS D R ... See More ⇒
ap8205s.pdf
AP8205S 20V N+N Channel Enhancement Mode MOSFET Description The AP8205S uses advanced trench technology to provide excellent R , low gate charge DS(ON) and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V, ID = 6A RDS(ON) ... See More ⇒
Detailed specifications: AP3407S, AP4435, AP4438, AP4606CS, AP4616, AP4953, AP55N03, AP8205, IRFP260, AP83T03K, AP8810, AP9926, BR4407, ATM2301PSA, ATM2302BNSA, ATM2306NSA, ATM2312NSA
Keywords - AP8205A MOSFET specs
AP8205A cross reference
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