AP9926 Specs and Replacement
Type Designator: AP9926
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 175 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SOP8
AP9926 substitution
- MOSFET ⓘ Cross-Reference Search
AP9926 datasheet
ap9926gm-hf.pdf
AP9926GM-HF Halogen-Free Product Advanced Power Dual N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 20V D2 D2 D1 Capable of 2.5V Gate Drive RDS(ON) 30m D1 Surface Mount Package ID 6A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description D2 D1 AP9926 series are from Advanced Power innovated design and silicon process te... See More ⇒
ap9926go.pdf
AP9926GO Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET G2 Low on-resistance BVDSS 20V S2 S2 D2 Capable of 2.5V gate drive RDS(ON) 28m G1 S1 Low drive current S1 ID 4.6A TSSOP-8 D1 Surface mount package Description D2 The Advanced Power MOSFETs fr... See More ⇒
ap9926geo-hf.pdf
AP9926GEO-HF Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET G2 Low On-resistance BVDSS 20V S2 S2 D2 Capable of 2.5V Gate Drive RDS(ON) 28m G1 S1 Low Drive Current S1 ID 4.6A TSSOP-8 D1 Surface Mount Package RoHS Compliant & Halogen-Free Description D1 D2 Advanced Power MOSFETs from APEC provide the G1 ... See More ⇒
Detailed specifications: AP4606CS, AP4616, AP4953, AP55N03, AP8205, AP8205A, AP83T03K, AP8810, SKD502T, BR4407, ATM2301PSA, ATM2302BNSA, ATM2306NSA, ATM2312NSA, ATM2601PSG, ATM2N65TE, ATM2N65TF
Keywords - AP9926 MOSFET specs
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