AP9926 Datasheet and Replacement
Type Designator: AP9926
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 175 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SOP8
AP9926 substitution
AP9926 Datasheet (PDF)
ap9926gm-hf.pdf

AP9926GM-HFHalogen-Free ProductAdvanced Power Dual N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Low Gate Charge BVDSS 20VD2D2D1 Capable of 2.5V Gate Drive RDS(ON) 30mD1 Surface Mount Package ID 6AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionD2D1AP9926 series are from Advanced Power innovated design andsilicon process te
ap9926go.pdf

AP9926GOPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETG2Low on-resistance BVDSS 20V S2S2D2Capable of 2.5V gate drive RDS(ON) 28m G1S1Low drive current S1 ID 4.6A TSSOP-8D1Surface mount package DescriptionD2The Advanced Power MOSFETs fr
ap9926geo-hf.pdf

AP9926GEO-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETG2 Low On-resistance BVDSS 20VS2S2D2 Capable of 2.5V Gate Drive RDS(ON) 28mG1S1 Low Drive Current S1 ID 4.6ATSSOP-8D1 Surface Mount Package RoHS Compliant & Halogen-FreeDescriptionD1 D2Advanced Power MOSFETs from APEC provide theG1
Datasheet: AP4606CS , AP4616 , AP4953 , AP55N03 , AP8205 , AP8205A , AP83T03K , AP8810 , IRF9540N , BR4407 , ATM2301PSA , ATM2302BNSA , ATM2306NSA , ATM2312NSA , ATM2601PSG , ATM2N65TE , ATM2N65TF .
History: VS4618AP
Keywords - AP9926 MOSFET datasheet
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History: VS4618AP



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