ATM2312NSA MOSFET. Datasheet pdf. Equivalent
Type Designator: ATM2312NSA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 20(max) nS
Cossⓘ - Output Capacitance: 105 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0318 Ohm
Package: SOT23
ATM2312NSA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ATM2312NSA Datasheet (PDF)
atm2312nsa.pdf
ATM2312NSA N-CHANNEL ENHANCEMENT MODE POWER MOSFETDrain-Source Voltage: 20V Continuous Drain Current: 5.0A FEATURES SOT-23 Small PackageSOT-23 V =20V, I =5ADS DR 31.8m@V =4.5VDS(ON) GSR 35.6m@V =2.5VDS(ON) GS Advanced Trench TechnologyAPPLICATIONS D Load Switching for portable Application3 DC/DC Converter1 2 G SSchematic d
atm2302bnsa.pdf
ATM2302BNSAN-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: 20V Drain Current: 3AFeatures Trench Power LV MOSFET technology High power and current handing capabilityR
atm2301psa.pdf
ATM2301PSAP-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: -20V Drain Current: -2.5AFeatures Trench FET Power MOSFET Excellent R and Low Gate ChargeDS(on)R
atm2306nsa.pdf
ATM2306NSAN-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: 30V Drain Current: 3.16ADESCRIPTIONThe ATM2306NSA uses advanced trench technologyto provide excellent RDS(on) with low gate charge.This device is suitable for use as a load switch orDC/DC converter .FEATURESV =30V 1Gate 2Source 3DrainDS(V)SOT-23 Plastic PackageI =3.16ADR )47m@10V
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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