ATM8N80TF MOSFET. Datasheet pdf. Equivalent
Type Designator: ATM8N80TF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 59 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 47 nC
trⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 135 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm
Package: TO220F
ATM8N80TF Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ATM8N80TF Datasheet (PDF)
..1. Size:693K agertech
atm8n80tf.pdf
atm8n80tf.pdf
ATM8N80TF N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage: 800V Continuous Drain Current: 8A DESCRIPTION The ATM8N80TF is a N-channel mode power MOSFET, it uses ATs advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse
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