ATM8N80TF Datasheet and Replacement
Type Designator: ATM8N80TF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 59 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 135 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm
Package: TO220F
ATM8N80TF substitution
ATM8N80TF Datasheet (PDF)
atm8n80tf.pdf

ATM8N80TF N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage: 800V Continuous Drain Current: 8A DESCRIPTION The ATM8N80TF is a N-channel mode power MOSFET, it uses ATs advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse
Datasheet: ATM2N65TE , ATM2N65TF , ATM3400ANSA , ATM3404NSA , ATM4N65TE , ATM7002KNSA , ATM7002NSA , ATM7430NDH , IRFZ24N , AO3481 , AO3485 , AO3487 , AO4407C , AONR21321 , AOTF4N60L , BLM2010E , IRFS240B .
History: PZP003BYB | AFN2304S | 2N65G-TMS2-T | AP4410AGM-HF | NX7002BKM | FQP5P10 | FDU6680
Keywords - ATM8N80TF MOSFET datasheet
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History: PZP003BYB | AFN2304S | 2N65G-TMS2-T | AP4410AGM-HF | NX7002BKM | FQP5P10 | FDU6680



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