AO3485 MOSFET Datasheet: P-Ch, 20V, 4A. Full specification with pinout and replacement list

AO3485 Specs and Replacement

Type Designator: AO3485

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 115 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm

Package: SOT23

AO3485 substitution

- MOSFET ⓘ Cross-Reference Search

AO3485 datasheet

..1. Size:818K aosemi
ao3485.pdf pdf_icon

AO3485 20V P-Channel MOSFET General Description Product Summary VDS -20V The AO3485 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-4.5V) -4A voltages as low as 1.8V. This device is suitable for use as RDS(ON) (at VGS= -4.5V) ... See More ⇒

0.1. Size:466K aosemi
ao3485c.pdf pdf_icon

AO3485C 20V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -4.5A Low Gate Charge RDS(ON) (at VGS=-4.5V) ... See More ⇒

9.1. Size:655K aosemi
ao3481c.pdf pdf_icon

AO3481C 30V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -30V Low RDS(ON) ID (at VGS=-10V) -4.3A Low Gate Charge RDS(ON) (at VGS=-10V) ... See More ⇒

9.2. Size:811K aosemi
ao3480.pdf pdf_icon

AO3480 30V N-Channel MOSFET General Description Product Summary VDS 30V The AO3480 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 5.7A extremely low RDS(ON). This device is suitable for use as a RDS(ON) (at VGS=10V) ... See More ⇒