All MOSFET. AONR21321 Datasheet

 

AONR21321 Datasheet and Replacement


   Type Designator: AONR21321
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 4.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
   Package: DFN3X3
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AONR21321 Datasheet (PDF)

 ..1. Size:318K  1
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AONR21321

AONR2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

 ..2. Size:318K  aosemi
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AONR21321

AONR2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

 7.1. Size:312K  1
 aonr21357.pdf pdf_icon

AONR21321

AONR2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)

 7.2. Size:314K  aosemi
 aonr21307.pdf pdf_icon

AONR21321

AONR2130730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

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History: LSF65R570GT | CSD16342Q5A

Keywords - AONR21321 MOSFET datasheet

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