AONR21321 Datasheet and Replacement
Type Designator: AONR21321
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 4.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8.5 nS
Cossⓘ - Output Capacitance: 185 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
Package: DFN3X3
AONR21321 substitution
AONR21321 Datasheet (PDF)
aonr21321.pdf

AONR2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)
aonr21321.pdf

AONR2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)
aonr21357.pdf

AONR2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)
aonr21307.pdf

AONR2130730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)
Datasheet: ATM7002KNSA , ATM7002NSA , ATM7430NDH , ATM8N80TF , AO3481 , AO3485 , AO3487 , AO4407C , RFP50N06 , AOTF4N60L , BLM2010E , IRFS240B , IRFS244B , IRFS254B , IRFS340B , IRFS440B , IRFS620B .
History: NTR4503NT1 | SIR774DP
Keywords - AONR21321 MOSFET datasheet
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History: NTR4503NT1 | SIR774DP



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