All MOSFET. AONR21321 Datasheet

 

AONR21321 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AONR21321
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 4.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 185 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
   Package: DFN3X3

 AONR21321 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AONR21321 Datasheet (PDF)

 ..1. Size:318K  1
 aonr21321.pdf

AONR21321 AONR21321

AONR2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

 ..2. Size:318K  aosemi
 aonr21321.pdf

AONR21321 AONR21321

AONR2132130V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

 7.1. Size:312K  1
 aonr21357.pdf

AONR21321 AONR21321

AONR2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)

 7.2. Size:314K  aosemi
 aonr21307.pdf

AONR21321 AONR21321

AONR2130730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -24A High Current Capability RDS(ON) (at VGS=-10V)

 7.3. Size:312K  aosemi
 aonr21357.pdf

AONR21321 AONR21321

AONR2135730V P-Channel MOSFETGeneral Description Product SummaryVDS Latest advanced trench technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)

 7.4. Size:789K  aosemi
 aonr21305c.pdf

AONR21321 AONR21321

AONR21305C30V P-Channel MOSFETGeneral Description Product SummaryVDS Latest Advanced Trench Technology -30V Low RDS(ON) ID (at VGS=-10V) -34A High Current Capability RDS(ON) (at VGS=-10V)

 7.5. Size:475K  aosemi
 aonr21311c.pdf

AONR21321 AONR21321

AONR21311C30V P-Channel MOSFETGeneral Description Product SummaryVDS-30V Latest advanced trench technology Low RDS(ON) ID (at VGS=-10V) -12A High Current Capability RDS(ON) (at VGS=-10V)

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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