All MOSFET. IRFS641 Datasheet

 

IRFS641 Datasheet and Replacement


   Type Designator: IRFS641
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60(max) nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220F
 

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IRFS641 Datasheet (PDF)

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IRFS641

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IRFS641

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IRFS641

 8.3. Size:916K  fairchild semi
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IRFS641

November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to

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Datasheet: IRFS254B , IRFS340B , IRFS440B , IRFS620B , IRFS621 , IRFS624B , IRF624B , IRFS631 , IRF830 , IRF720B , IRFS720B , AF2301P , APM2071PD , AMS4004 , AMS4210 , B1M160120HC , CE3512K2 .

History: SFG60N12FF | SFG280N08PF

Keywords - IRFS641 MOSFET datasheet

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