IRFS641 - Даташиты. Аналоги. Основные параметры
Наименование производителя: IRFS641
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 40
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 9.8
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 60(max)
ns
Cossⓘ - Выходная емкость: 240
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.18
Ohm
Тип корпуса:
TO220F
Аналог (замена) для IRFS641
-
подбор ⓘ MOSFET транзистора по параметрам
IRFS641 Datasheet (PDF)
8.3. Size:916K fairchild semi
irf640b irfs640b.pdf 
November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to
8.4. Size:898K fairchild semi
irfs644b.pdf 
November 2001IRF644B/IRFS644B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC)planar, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored to
8.5. Size:900K fairchild semi
irf644b irfs644b.pdf 
November 2001IRF644B/IRFS644B250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.28 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC)planar, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been especially tailored to
8.6. Size:922K fairchild semi
irfs640b.pdf 
November 2001IRF640B/IRFS640B200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailored to
8.7. Size:504K samsung
irfs644a.pdf 
Advanced Power MOSFETFEATURESBVDSS = 250 V Avalanche Rugged TechnologyRDS(on) = 0.28 Rugged Gate Oxide Technology Lower Input CapacitanceID = 7.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 0.214 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic V
8.8. Size:508K samsung
irfs640a.pdf 
Advanced Power MOSFETFEATURESBVDSS = 200 V Avalanche Rugged TechnologyRDS(on) = 0.18 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 (Typ. )1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic
Другие MOSFET... IRFS254B
, IRFS340B
, IRFS440B
, IRFS620B
, IRFS621
, IRFS624B
, IRF624B
, IRFS631
, 2N60
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, IRFS720B
, AF2301P
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, AMS4004
, AMS4210
, B1M160120HC
, CE3512K2
.
