All MOSFET. C2M1000170J Datasheet

 

C2M1000170J Datasheet and Replacement


   Type Designator: C2M1000170J
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 5.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: D2PAK-7L
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C2M1000170J Datasheet (PDF)

 ..1. Size:1101K  cree
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C2M1000170J

VDS 1700 VID @ 25C 5.3 AC2M1000170J RDS(on) 1.0 Silicon Carbide Power MOSFET TM C2M MOSFET TechnologyN-Channel Enhancement ModeFeatures PackageTAB High blocking voltage with low RDS(on)Drain Easy to parallel and simple to drive Low parasitic inductance Separate driver source pin Ultra-low drain-gate capacitance Halogen Free, RoHS compli

 4.1. Size:622K  cree
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C2M1000170J

VDS 1700 VID @ 25C 4.9 AC2M1000170D RDS(on) 1.0 Silicon Carbide Power MOSFET TM Z-FET MOSFETN-Channel Enhancement ModeFeatures Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Halogen Free, RoHS CompliantBenefitsTO-247-3 Higher System Effi

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SSF1006H | HLML6401 | SQS405EN | IXTA200N085T7 | FMP11N60E | MPSA80M670B | AP85T03GH-HF

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