All MOSFET. C2M1000170J Datasheet

 

C2M1000170J Datasheet and Replacement


   Type Designator: C2M1000170J
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.8 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: D2PAK-7L
 

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C2M1000170J Datasheet (PDF)

 ..1. Size:1101K  cree
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C2M1000170J

VDS 1700 VID @ 25C 5.3 AC2M1000170J RDS(on) 1.0 Silicon Carbide Power MOSFET TM C2M MOSFET TechnologyN-Channel Enhancement ModeFeatures PackageTAB High blocking voltage with low RDS(on)Drain Easy to parallel and simple to drive Low parasitic inductance Separate driver source pin Ultra-low drain-gate capacitance Halogen Free, RoHS compli

 4.1. Size:622K  cree
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C2M1000170J

VDS 1700 VID @ 25C 4.9 AC2M1000170D RDS(on) 1.0 Silicon Carbide Power MOSFET TM Z-FET MOSFETN-Channel Enhancement ModeFeatures Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Halogen Free, RoHS CompliantBenefitsTO-247-3 Higher System Effi

Datasheet: IRF720B , IRFS720B , AF2301P , APM2071PD , AMS4004 , AMS4210 , B1M160120HC , CE3512K2 , RU7088R , C3M0065090D , C3M0065100K , C3M0120090D , C3M0120090J , 2N7002ED , 2N7002ET , 2N7002EW , AD50N06S .

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