C2M1000170J PDF and Equivalents Search

 

C2M1000170J Specs and Replacement

Type Designator: C2M1000170J

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 78 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.8 nS

Cossⓘ - Output Capacitance: 12 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: D2PAK-7L

C2M1000170J substitution

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C2M1000170J datasheet

 ..1. Size:1101K  cree
 c2m1000170j.pdf pdf_icon

C2M1000170J

VDS 1700 V ID @ 25 C 5.3 A C2M1000170J RDS(on) 1.0 Silicon Carbide Power MOSFET TM C2M MOSFET Technology N-Channel Enhancement Mode Features Package TAB High blocking voltage with low RDS(on) Drain Easy to parallel and simple to drive Low parasitic inductance Separate driver source pin Ultra-low drain-gate capacitance Halogen Free, RoHS compli... See More ⇒

 4.1. Size:622K  cree
 c2m1000170d.pdf pdf_icon

C2M1000170J

VDS 1700 V ID @ 25 C 4.9 A C2M1000170D RDS(on) 1.0 Silicon Carbide Power MOSFET TM Z-FET MOSFET N-Channel Enhancement Mode Features Package High Speed Switching with Low Capacitances High Blocking Voltage with Low RDS(on) Easy to Parallel and Simple to Drive Resistant to Latch-Up Halogen Free, RoHS Compliant Benefits TO-247-3 Higher System Effi... See More ⇒

Detailed specifications: IRF720B, IRFS720B, AF2301P, APM2071PD, AMS4004, AMS4210, B1M160120HC, CE3512K2, IRFZ48N, C3M0065090D, C3M0065100K, C3M0120090D, C3M0120090J, 2N7002ED, 2N7002ET, 2N7002EW, AD50N06S

Keywords - C2M1000170J MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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