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AS0130KA Specs and Replacement

Type Designator: AS0130KA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 94 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TO252

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AS0130KA datasheet

 ..1. Size:1105K  anbon
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AS0130KA

AS0130KA N-Channel Enhancement Mode Power MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 100V 32m @10V 30A Feature Application High density cell design for ultra low Rdson Power switching application Fully characterized avalanche voltage and current Hard switched and high frequency circuits Good stability and uniformity with high EAS Uninterruptible power supply Excellent ... See More ⇒

Detailed specifications: C3M0120090D, C3M0120090J, 2N7002ED, 2N7002ET, 2N7002EW, AD50N06S, AD90N03S, AO6385, AOD4184A, AS2003M, AS2101W, AS2102W, AS2300, AS2301, AS2302, AS2303, AS2304

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