AS0130KA Datasheet and Replacement
Type Designator: AS0130KA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 85 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 94 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO252
AS0130KA substitution
AS0130KA Datasheet (PDF)
as0130ka.pdf

AS0130KA N-Channel Enhancement Mode Power MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 100V 32m@10V 30A Feature Application High density cell design for ultra low Rdson Power switching application Fully characterized avalanche voltage and current Hard switched and high frequency circuits Good stability and uniformity with high EAS Uninterruptible power supply Excellent
Datasheet: C3M0120090D , C3M0120090J , 2N7002ED , 2N7002ET , 2N7002EW , AD50N06S , AD90N03S , AO6385 , HY1906P , AS2003M , AS2101W , AS2102W , AS2300 , AS2301 , AS2302 , AS2303 , AS2304 .
History: PD506BA | AUIRFIZ44N | SM140R50CT1TL | BLP04N10-P | DHB16N06 | APT17M120JCU2 | AP60SL650AFI
Keywords - AS0130KA MOSFET datasheet
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History: PD506BA | AUIRFIZ44N | SM140R50CT1TL | BLP04N10-P | DHB16N06 | APT17M120JCU2 | AP60SL650AFI



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