All MOSFET. AS2101W Datasheet

 

AS2101W Datasheet and Replacement


   Type Designator: AS2101W
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 1.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT323
 

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AS2101W Datasheet (PDF)

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AS2101W

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AS2101W

AS2102W N-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 68m@4.5V 20V 2.1A 115m@2.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-323 Marking TS2 Document ID Issued Date Revised Date Revision Page.

Datasheet: 2N7002ED , 2N7002ET , 2N7002EW , AD50N06S , AD90N03S , AO6385 , AS0130KA , AS2003M , AO4468 , AS2102W , AS2300 , AS2301 , AS2302 , AS2303 , AS2304 , AS2305 , AS2307 .

History: IXTH1N200P3 | 2N60G-T2Q-T

Keywords - AS2101W MOSFET datasheet

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