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AS2101W Specs and Replacement

Type Designator: AS2101W

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT323

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AS2101W datasheet

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AS2101W

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AS2101W

AS2102W N-Channel Enhancement Mode MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 68m @4.5V 20V 2.1A 115m @2.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-323 Marking TS2 Document ID Issued Date Revised Date Revision Page. ... See More ⇒

Detailed specifications: 2N7002ED, 2N7002ET, 2N7002EW, AD50N06S, AD90N03S, AO6385, AS0130KA, AS2003M, 60N06, AS2102W, AS2300, AS2301, AS2302, AS2303, AS2304, AS2305, AS2307

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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