All MOSFET. AS2101W Datasheet

 

AS2101W Datasheet and Replacement


   Type Designator: AS2101W
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 1.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT323
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AS2101W Datasheet (PDF)

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AS2101W

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AS2101W

AS2102W N-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 68m@4.5V 20V 2.1A 115m@2.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-323 Marking TS2 Document ID Issued Date Revised Date Revision Page.

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: NCEP40T17G | WMR07N06TS | 2SK1033 | AP2R803AGMT-HF | AONS65625 | WMR13N03T1 | CSD17301Q5

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