AS2307 Specs and Replacement
Type Designator: AS2307
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 1.04 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ -
Output Capacitance: 74 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: SOT23
- MOSFET ⓘ Cross-Reference Search
AS2307 datasheet
..1. Size:1915K anbon
as2307.pdf 
P-Channel MOSFET AS2307 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE Load Switch for Portable Devices 3. DRAIN DC/DC Converter MARKING B 1 1 Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source Voltage - BV ... See More ⇒
9.1. Size:1783K anbon
as2306.pdf
AS2306 N-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE 3. DRAIN Load Switch for Portable Devices DC/DC Converter MARKING A6 Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source Voltage BV 20 V DSS - ... See More ⇒
9.2. Size:1817K anbon
as2302.pdf
AS2302 N-Channel 20V(D-S) MOSFET SOT-23 Plastic-Encapsulate MOSFETS SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE 3. DRAIN Load Switch for Portable Devices DC/DC Converter MARKING A2 Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source Voltage BVDSS 20 V - ... See More ⇒
9.3. Size:2103K anbon
as2304.pdf
N-Channel 30V(D-S) MOSFET AS2304 SOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0... See More ⇒
9.4. Size:2210K anbon
as2308.pdf
AS2308 N-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.9... See More ⇒
9.5. Size:1837K anbon
as2305.pdf
P-Channel MOSFET AS2305 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE Load Switch for Portable Devices 3. DRAIN DC/DC Converter MARKING A5 Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source Voltage BV -20 V DSS -... See More ⇒
9.6. Size:761K anbon
as2309.pdf
AS2309 P-Channel Enhancement Mode MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 180m @-10V -60V -1.7A 270m @-4.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-23 Marking 18P6 Document ID Issued Date Revised Date Revision Page... See More ⇒
9.7. Size:678K anbon
as2300.pdf
AS2300 N-Channel Enhancement Mode MOSFET Product Summary V(BR)DSS RDS(on)MAX ID 25m @4.5V 20V 32m @2.5V 4.5A 49m @1.8V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-23 Marking S0. Document ID Issued Date Revised Date Revision... See More ⇒
9.8. Size:1796K anbon
as2301.pdf
AS2301 P-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE Load Switch for Portable Devices 3. DRAIN DC/DC Converter MARKING A1 Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source Voltage BVDSS -20 V - ... See More ⇒
9.9. Size:2062K anbon
as2303.pdf
AS2303 P-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e 0.9... See More ⇒
9.11. Size:400K fms
as2302.pdf
N-Channel Enhancement Mode MOSFET Formosa MS AS2302 Product Summary V(BR)DSS RDS(on)MAX ID 55m @4.5V 20V 3.0A 80m @2.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-23 Marking 2302B. Document ID http //www.formosagr.com Doc... See More ⇒
9.16. Size:419K fms
as2301.pdf
P-Channel Enhancement Mode MOSFET Formosa MS AS2301 Product Summary V(BR)DSS RDS(on)MAX ID 64m @-4.5V -20V 80m @-2.5V -3.4A 95m @-1.8V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-23 Marking S1. Document ID http //www.form... See More ⇒
Detailed specifications: AS2101W, AS2102W, AS2300, AS2301, AS2302, AS2303, AS2304, AS2305, 20N60, BM2300, BM3402, BM3407A, BM3415E, BM3416E, BML6401, BML6402, SI2301-P
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
