All MOSFET. BM3407A Datasheet

 

BM3407A Datasheet and Replacement


   Type Designator: BM3407A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   ton ⓘ - Turn-on Time: 6 nS
   Cossⓘ - Output Capacitance: 37 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOT23
 

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BM3407A Datasheet (PDF)

 ..1. Size:1870K  born
 bm3407a.pdf pdf_icon

BM3407A

BM3407AMOSFET ROHSP-Channel Enhancement-Mode MOSFET SOT-23-FeaturesAdvanced trench process technology High Density Cell Design For Ultra Low On-ResistanceMAXIMUM RANTINGSCharacteristic Symbol Max Unit-30Drain-Source Voltage BV VDSSGate- Source VoltageV VGS +20Drain Current (continuous)I -4.1 ADDrain Current (pulsed) I ADM-16Total Device Di

 9.1. Size:1779K  born
 bm3402.pdf pdf_icon

BM3407A

BM3402MOSFET ROHSN-Channel Enhancement-Mode MOSFETSOT-23-Features Low RDS(on) @VGS=10V 3.3V Logic Level Control N Channel SOT23 Package Pb-Free, RoHS CompliantApplications DC-to-DC converters Power management in battery-driven portablesV R Typ I Max (BR)DSS DS(ON) D Low-side load switch and charging switch for28m @10V portable devices

Datasheet: AS2301 , AS2302 , AS2303 , AS2304 , AS2305 , AS2307 , BM2300 , BM3402 , 50N06 , BM3415E , BM3416E , BML6401 , BML6402 , SI2301-P , SI2301S , SI2302S , SI2333 .

History: SVF12N65STR | CS50N06P | FDZ204P | SSM3K335R | NCV8408 | IRF7815PBF | APT47N60BCFG

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