BM3415E MOSFET. Datasheet pdf. Equivalent
Type Designator: BM3415E
Marking Code: 3415E
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 4.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14.2 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOT23
BM3415E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BM3415E Datasheet (PDF)
bm3415e.pdf
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BM3415EMOSFET ROHSP-Channel Enhancement-Mode MOSFET SOT-23-Features Low RDS(on) @VGS=-4.5V -3.3V Logic Level Control P Channel SOT23 Package HMB ESD Protection 2KV Pb-Free, RoHS CompliantApplicationsV R Typ I Max(BR)DSS DS(ON) D Load Switch37m @-4.5V Switching circuits-20V -4.8A High-speed line driver43m @ -3.3V Power Manage
bm3416e.pdf
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BM3416EMOSFET ROHSN-Channel Enhancement-Mode MOSFET SOT-23-Features Low RDS(on) @VGS=4.5V 3.3V Logic Level Control N Channel SOT23 Package HMB ESD Protection 2KV Pb-Free, RoHS CompliantApplications DC-to-DC converters Power management in battery-driven portablesV R Typ I Max (BR)DSS DS(ON) D Low-side load switch and charging switch for
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