BM3415E Specs and Replacement
Type Designator: BM3415E
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOT23
BM3415E substitution
- MOSFET ⓘ Cross-Reference Search
BM3415E datasheet
bm3415e.pdf
BM3415E MOSFET ROHS P-Channel Enhancement-Mode MOSFET SOT-23 - Features Low RDS(on) @VGS=-4.5V -3.3V Logic Level Control P Channel SOT23 Package HMB ESD Protection 2KV Pb-Free, RoHS Compliant Applications V R Typ I Max (BR)DSS DS(ON) D Load Switch 37m @-4.5V Switching circuits -20V -4.8A High-speed line driver 43m @ -3.3V Power Manage... See More ⇒
bm3416e.pdf
BM3416E MOSFET ROHS N-Channel Enhancement-Mode MOSFET SOT-23 - Features Low RDS(on) @VGS=4.5V 3.3V Logic Level Control N Channel SOT23 Package HMB ESD Protection 2KV Pb-Free, RoHS Compliant Applications DC-to-DC converters Power management in battery-driven portables V R Typ I Max (BR)DSS DS(ON) D Low-side load switch and charging switch for ... See More ⇒
Detailed specifications: AS2302, AS2303, AS2304, AS2305, AS2307, BM2300, BM3402, BM3407A, IRFP460, BM3416E, BML6401, BML6402, SI2301-P, SI2301S, SI2302S, SI2333, ASDM20N12ZB
Keywords - BM3415E MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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