ASDM2301ZA MOSFET. Datasheet pdf. Equivalent
Type Designator: ASDM2301ZA
Marking Code: A1SHB
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 3.3 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: SOT23
ASDM2301ZA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ASDM2301ZA Datasheet (PDF)
asdm2301za.pdf
ASDM2301ZA20V P-CHANNEL MOSFET FeaturesProduct Summary High Power and current handing capabilityVDSS RDS(ON) RDS(ON) ID Lead free product is acquired(Typ) (Typ) @-4.5V @-2.5V Surface Mount Package-20V65m 83m -3AApplication PWM applicationsLoad switchPower managementtop viewDGSOT-23 Absolute Maximum Ratings (TA=25unless other
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asdm20n12zb.pdf
ASDM20N12ZB20V N-CHANNEL MOSFETProduct SummaryFeatures 20V/12AV DS 20 V Super High Dense Cell DesignR DS(on),Typ@ VGS=4.5 V 11.5 m Reliable and RuggedI D 12 A Lead Free Available (RoHS Compliant)Applications Portable Equipment and Battery Powered Systems. DC-DC converter Load Switch Top viewDGSSOT-23-3Absolute Maximum Ratings (TA=25C Unless O
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