ASDM30N55E MOSFET Datasheet: N-Ch, 30V, 55A. Full specification with pinout and replacement list

ASDM30N55E Specs and Replacement

Type Designator: ASDM30N55E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 49 nS

Cossⓘ - Output Capacitance: 410 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: DFN3.3X3.3

ASDM30N55E substitution

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ASDM30N55E datasheet

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ASDM30N55E 30V N-CHANNEL MOSFET Feature Product Summary 100% EAS Guaranteed VDS 30 V Green Device Available Super Low Gate Charge RDS(on),typ VGS=10V 4.8 m Excellent CdV/dt effect decline A 55 ID Advanced high cell density Trench technology Application Power Management in Inverter System top view DFN3.3*3.3-8 Maximum ratings, at T A=25 C, unless othe... See More ⇒

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ASDM30N65E 30V N-CHANNEL MOSFET Product Summary Feature l Low Gate Charge VDS 30 V l Green Device Available 4.5 m RDS(on),typ VGS=10V l Super Low Gate Charge A 65 ID l Excellent CdV/dt effect decline l Advanced high cell density Trench technology Applications l Power Management in Desktop Computer or DC/DC Converters. l Isolated DC/DC Converters in Telecom and Industrial. ... See More ⇒

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