CR4N65A4K PDF and Equivalents Search

 

CR4N65A4K Specs and Replacement

Type Designator: CR4N65A4K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 4 V

Qg ⓘ - Total Gate Charge: 15.8 nC

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 41 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm

Package: TO252

CR4N65A4K substitution

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CR4N65A4K datasheet

 ..1. Size:434K  crhj
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CR4N65A4K

Silicon N-Channel Power MOSFET CR4N65 A4K General Description VDSS 650 V CR4N65 A4K, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching... See More ⇒

 8.1. Size:437K  crhj
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CR4N65A4K

Silicon N-Channel Power MOSFET CR4N65F A9K General Description VDSS 650 V CR4N65F A9K, the silicon N-channel Enhanced ID 4 A PD(TC=25 ) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switchi... See More ⇒

Detailed specifications: ASDM3401ZB, ASDM3404ZA, ASDM40N52, ASDM40N80Q, ASDM4406S, ASDM4410S, ASDM4614S, ASDM65N18S, SPP20N60C3, CR4N65FA9K, CRJD390N65GC, CRSD082N10L2, CRSE120N10L2, CRSM053N08N, CRST040N10N, CRSS037N10N, CRST041N08N

Keywords - CR4N65A4K MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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