CR4N65A4K Datasheet and Replacement
Type Designator: CR4N65A4K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 41 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.8 Ohm
Package: TO252
CR4N65A4K substitution
CR4N65A4K Datasheet (PDF)
cr4n65a4k.pdf

Silicon N-Channel Power MOSFET CR4N65 A4K General Description VDSS 650 V CR4N65 A4K, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching
cr4n65fa9k.pdf

Silicon N-Channel Power MOSFET CR4N65F A9K General Description VDSS 650 V CR4N65F A9K, the silicon N-channel Enhanced ID 4 A PD(TC=25) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 2.4 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switchi
Datasheet: ASDM3401ZB , ASDM3404ZA , ASDM40N52 , ASDM40N80Q , ASDM4406S , ASDM4410S , ASDM4614S , ASDM65N18S , AON7410 , CR4N65FA9K , CRJD390N65GC , CRSD082N10L2 , CRSE120N10L2 , CRSM053N08N , CRST040N10N , CRSS037N10N , CRST041N08N .
History: 2SJ604-S | STP10NB20FP
Keywords - CR4N65A4K MOSFET datasheet
CR4N65A4K cross reference
CR4N65A4K equivalent finder
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CR4N65A4K substitution
CR4N65A4K replacement
History: 2SJ604-S | STP10NB20FP



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