CRTS030N04L MOSFET. Datasheet pdf. Equivalent
Type Designator: CRTS030N04L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 175 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 131 nC
trⓘ - Rise Time: 111 nS
Cossⓘ - Output Capacitance: 686 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: TO263
CRTS030N04L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CRTS030N04L Datasheet (PDF)
crts030n04l.pdf
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crts084ne6n.pdf
CRTS084NE6N() Trench N-MOSFET 68V, 6.8m, 83AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench technology 68V Extremely low on-resistance RDS(on) RDS(on) typ. 6.8m Excellent QgxRDS(on) product(FOM) ID83A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Avalanch
crts095n12n.pdf
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