CRTT029N06N Datasheet and Replacement
Type Designator: CRTT029N06N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 254 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 220 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 118 nS
Cossⓘ - Output Capacitance: 1208 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
Package: TO220
CRTT029N06N substitution
CRTT029N06N Datasheet (PDF)
crtt029n06n.pdf

CRTT029N06N() Trench N-MOSFET 60V, 2.3m, 160AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench technology 60V Extremely low on-resistance RDS(on) RDS(on) typ. 2.3m Excellent QgxRDS(on) product(FOM) ID160A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Avalan
crtt056n06n.pdf

CRTT056N06N() Trench N-MOSFET 60V, 4.2m, 110AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench technology 60V Extremely low on-resistance RDS(on) RDS(on) typ. 4.2m Excellent QgxRDS(on) product(FOM) ID110A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications Motor c
crtt084ne6n.pdf

CRTT084NE6N() Trench N-MOSFET 68V, 7.1m, 81AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench technology 68V Extremely low on-resistance RDS(on) RDS(on) typ. 7.1m Excellent QgxRDS(on) product(FOM) ID81A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Avalanch
Datasheet: CRTD063N04L , CRTD084NE6N , CRTD105N06L , CRTD110N03L , CRTE120N06L , CRTM025N03L , CRTS030N04L , CRTS095N12N , IRF830 , CRTT056N06N , CRTT084NE6N , CS3N150AHR , SKD502T , SKSS055N08N , SKD503T , SKSS042N10N , SKST065N08N .
History: FDD850N10LD | BUZ10S2 | IRFS830B
Keywords - CRTT029N06N MOSFET datasheet
CRTT029N06N cross reference
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History: FDD850N10LD | BUZ10S2 | IRFS830B



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