CRTT029N06N MOSFET Datasheet: N-Ch, 60V, 220A. Full specification with pinout and replacement list

CRTT029N06N Specs and Replacement

Type Designator: CRTT029N06N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 254 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 220 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 118 nS

Cossⓘ - Output Capacitance: 1208 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm

Package: TO220

CRTT029N06N substitution

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CRTT029N06N datasheet

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CRTT029N06N ( ) Trench N-MOSFET 60V, 2.3m , 160A Features Product Summary VDS Uses CRM(CQ) advanced Trench technology 60V Extremely low on-resistance RDS(on) RDS(on) typ. 2.3m Excellent QgxRDS(on) product(FOM) ID 160A Qualified according to JEDEC criteria 100% DVDS Tested 100% DVDS Tested 100% DVDS Tested Applications 100% Avalan... See More ⇒

9.1. Size:578K crhj
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CRTT056N06N ( ) Trench N-MOSFET 60V, 4.2m , 110A Features Product Summary VDS Uses CRM(CQ) advanced Trench technology 60V Extremely low on-resistance RDS(on) RDS(on) typ. 4.2m Excellent QgxRDS(on) product(FOM) ID 110A Qualified according to JEDEC criteria 100% DVDS Tested 100% DVDS Tested 100% DVDS Tested Applications Motor c... See More ⇒

9.2. Size:501K crhj
crtt084ne6n.pdf pdf_icon

CRTT084NE6N ( ) Trench N-MOSFET 68V, 7.1m , 81A Features Product Summary VDS Uses CRM(CQ) advanced Trench technology 68V Extremely low on-resistance RDS(on) RDS(on) typ. 7.1m Excellent QgxRDS(on) product(FOM) ID 81A Qualified according to JEDEC criteria 100% DVDS Tested 100% DVDS Tested 100% DVDS Tested Applications 100% Avalanch... See More ⇒

Detailed specifications: CRTD063N04L, CRTD084NE6N, CRTD105N06L, CRTD110N03L, CRTE120N06L, CRTM025N03L, CRTS030N04L, CRTS095N12N, 2N60, CRTT056N06N, CRTT084NE6N, CS3N150AHR, SKD502T, SKSS055N08N, SKD503T, SKSS042N10N, SKST065N08N