CRTT084NE6N MOSFET. Datasheet pdf. Equivalent
Type Designator: CRTT084NE6N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 111 W
Maximum Drain-Source Voltage |Vds|: 68 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 81 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 72 nC
Rise Time (tr): 75 nS
Drain-Source Capacitance (Cd): 292 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0084 Ohm
Package: TO220
CRTT084NE6N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CRTT084NE6N Datasheet (PDF)
crtt084ne6n.pdf
CRTT084NE6N() Trench N-MOSFET 68V, 7.1m, 81AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench technology 68V Extremely low on-resistance RDS(on) RDS(on) typ. 7.1m Excellent QgxRDS(on) product(FOM) ID81A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Avalanch
crtt029n06n.pdf
CRTT029N06N() Trench N-MOSFET 60V, 2.3m, 160AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench technology 60V Extremely low on-resistance RDS(on) RDS(on) typ. 2.3m Excellent QgxRDS(on) product(FOM) ID160A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications100% Avalan
crtt056n06n.pdf
CRTT056N06N() Trench N-MOSFET 60V, 4.2m, 110AFeatures Product SummaryVDS Uses CRM(CQ) advanced Trench technology 60V Extremely low on-resistance RDS(on) RDS(on) typ. 4.2m Excellent QgxRDS(on) product(FOM) ID110A Qualified according to JEDEC criteria100% DVDS Tested100% DVDS Tested100% DVDS TestedApplications Motor c
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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