AS2310
MOSFET. Datasheet pdf. Equivalent
Type Designator: AS2310
Marking Code: S10.
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 5.1
nC
trⓘ - Rise Time: 51
nS
Cossⓘ -
Output Capacitance: 90
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
SOT-23
AS2310
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AS2310
Datasheet (PDF)
..1. Size:594K anbon
as2310.pdf
AS2310 N-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 100m@10V 60V 3A 120m@4.5V Feature Application High power and current handing capability Battery Switch Lead free product is acquired DC/DC Converter Package Circuit diagram SOT-23 Marking S10. Document ID Issued Date Revised Date Revision Page. Page 1 AS-3150040 2003/03/08 2018
9.1. Size:307K anbon
as2318.pdf
AS2318 N-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 45m@10V 40V 5A 60m@4.5V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter Package Circuit diagram SOT-23 Marking 4005. Document ID Issued Date Revised Date Revision Page. Pa
9.2. Size:2163K anbon
as2312.pdf
AS231 2 N-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETS Dimensions In Millimeters Dimensions In InchesSymbolMin Max Min MaxA 0.900 1.150 0.035 0.045A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0.100e 0.
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