AS3415E Datasheet and Replacement
Type Designator: AS3415E
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 5.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 63 nS
Cossⓘ - Output Capacitance: 219 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: SOT-23
AS3415E substitution
AS3415E Datasheet (PDF)
as3415e.pdf

AS3415E P-Channel Enhancement Mode MOSFETProduct Summary V R I (BR)DSS DS(on)MAX D36m@-4.5V -20V 49m@-2.5V -5.6A 69m@-1.8V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter ESD Protected Up to 2.0KV (HBM) Package Circuit diagram SOT-23
as3416e.pdf

N-Channel MOSFET(ESD)AS3416ESOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE 3. DRAIN Load Switch for Portable Devices DC/DC Converter MARKING: AF Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source VoltageBV 20 VDSS-
as3418.pdf

AS341 8 N-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE 3. DRAIN Load Switch for Portable Devices DC/DC Converter MARKING: B 1 8 Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source VoltageBV 30 VDSS-
Datasheet: AS2341 , AS3019E , AS3100 , AS3400 , AS3403 , AS3404 , AS3407 , AS3409 , IRF3205 , AS3416E , AS3418 , AS3422 , AS3423 , AS3434E , AS3442 , AS3523 , AS3621 .
History: WVM15N20 | VS3610GPMT | NCE65T540I | IPS60R3K4CE | SML30B48 | HM2302BWKR | NTHD5904NT3
Keywords - AS3415E MOSFET datasheet
AS3415E cross reference
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History: WVM15N20 | VS3610GPMT | NCE65T540I | IPS60R3K4CE | SML30B48 | HM2302BWKR | NTHD5904NT3



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