AS3416E MOSFET Datasheet: N-Ch, 20V, 6.5A. Full specification with pinout and replacement list

AS3416E Specs and Replacement

Type Designator: AS3416E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: SOT-23

AS3416E substitution

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AS3416E datasheet

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N-Channel MOSFET(ESD) AS3416E SOT-23 Plastic-Encapsulate MOSFETS SOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE 3. DRAIN Load Switch for Portable Devices DC/DC Converter MARKING AF Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source Voltage BV 20 V DSS - ... See More ⇒

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AS3415E P-Channel Enhancement Mode MOSFET Product Summary V R I (BR)DSS DS(on)MAX D 36m @-4.5V -20V 49m @-2.5V -5.6A 69m @-1.8V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter ESD Protected Up to 2.0KV (HBM) Package Circuit diagram SOT-23 ... See More ⇒

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