All MOSFET. AS3416E Datasheet

 

AS3416E Datasheet and Replacement


   Type Designator: AS3416E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: SOT-23
 

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AS3416E Datasheet (PDF)

 ..1. Size:2002K  anbon
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AS3416E

N-Channel MOSFET(ESD)AS3416ESOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE 3. DRAIN Load Switch for Portable Devices DC/DC Converter MARKING: AF Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source VoltageBV 20 VDSS-

 9.1. Size:352K  anbon
 as3415e.pdf pdf_icon

AS3416E

AS3415E P-Channel Enhancement Mode MOSFETProduct Summary V R I (BR)DSS DS(on)MAX D36m@-4.5V -20V 49m@-2.5V -5.6A 69m@-1.8V Feature Application Advanced trench process technology Load Switch for Portable Devices High density cell design for ultra low on-resistance DC/DC Converter ESD Protected Up to 2.0KV (HBM) Package Circuit diagram SOT-23

 9.2. Size:1935K  anbon
 as3418.pdf pdf_icon

AS3416E

AS341 8 N-Channel MOSFET SOT-23 Plastic-Encapsulate MOSFETSSOT-23 FEATURE TrenchFET Power MOSFET 1. GATE APPLICATIONS 2. SOURCE 3. DRAIN Load Switch for Portable Devices DC/DC Converter MARKING: B 1 8 Maximum ratings (Ta=25 unless otherwise noted) Characteristic Symbol Max Unit Drain-Source VoltageBV 30 VDSS-

Datasheet: AS3019E , AS3100 , AS3400 , AS3403 , AS3404 , AS3407 , AS3409 , AS3415E , IRF740 , AS3418 , AS3422 , AS3423 , AS3434E , AS3442 , AS3523 , AS3621 , AS4375 .

History: 2SJ540

Keywords - AS3416E MOSFET datasheet

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