SSF10N60A Spec and Replacement
Type Designator: SSF10N60A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 190 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO3PF
SSF10N60A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSF10N60A Specs
ssf10n60a.pdf
SSF10N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.9 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 25 A (Max.) @ VDS = 600V Low RDS(ON) 0.646 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol... See More ⇒
Detailed specifications: SML80H12 , SML80H14 , SML80J25 , SML80J28 , SML80J44 , SML80L27 , SML80S13 , SML80T27 , IRF1405 , SSF10N80A , SSF10N90A , SSF17N60A , SSF22N50A , SSF25N40A , SSF45N20A , SSF4N80AS , SSF4N90AS .
History: IPP60R190P6 | AP02N90JB
Keywords - SSF10N60A MOSFET specs
SSF10N60A cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IPP60R190P6 | AP02N90JB
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