SSF10N60A Datasheet. Specs and Replacement
Type Designator: SSF10N60A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 190 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO3PF
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SSF10N60A substitution
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SSF10N60A datasheet
ssf10n60a.pdf
SSF10N60A Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6.9 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 25 A (Max.) @ VDS = 600V Low RDS(ON) 0.646 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol... See More ⇒
Detailed specifications: SML80H12, SML80H14, SML80J25, SML80J28, SML80J44, SML80L27, SML80S13, SML80T27, IRF1405, SSF10N80A, SSF10N90A, SSF17N60A, SSF22N50A, SSF25N40A, SSF45N20A, SSF4N80AS, SSF4N90AS
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