SSF10N60A Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SSF10N60A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 90 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.9 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 23 ns
Cossⓘ - Выходная емкость: 190 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
Тип корпуса: TO3PF
Аналог (замена) для SSF10N60A
SSF10N60A Datasheet (PDF)
ssf10n60a.pdf

SSF10N60AAdvanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 6.9 A Improved Gate Charge Extended Safe Operating AreaTO-3PF Lower Leakage Current : 25 A (Max.) @ VDS = 600V Low RDS(ON) : 0.646 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol
ssf10n60.pdf

SSF10N60 Main Product Characteristics: VDSS 600V RDS(on) 0.69 (typ.) ID 10A Marking a nd p in Schematic diagram TO-220 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf10n60f.pdf

SSF10N60F Main Product Characteristics: VDSS 600V RDS(on) 0.69ohm(typ.) ID 10A Marking and p in TO220F Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf10n65.pdf

SSF10N65 Main Product Characteristics: VDSS 650V RDS(on) 0.9 (typ.) ID 10A Marking a nd p in Schematic diagram TO-220 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
Другие MOSFET... SML80H12 , SML80H14 , SML80J25 , SML80J28 , SML80J44 , SML80L27 , SML80S13 , SML80T27 , NCEP15T14 , SSF10N80A , SSF10N90A , SSF17N60A , SSF22N50A , SSF25N40A , SSF45N20A , SSF4N80AS , SSF4N90AS .
History: SML802R4BN | IRFI630A | FS70VS-2
History: SML802R4BN | IRFI630A | FS70VS-2



Список транзисторов
Обновления
MOSFET: JMPL1050PU | JMPL1050PK | JMPL1050PG | JMPL1050AY | JMPL1050AUQ | JMPL1050AU | JMPL1050APD | JMPL1050AP | JMPL1050AKQ | JMPL1050AK | JMPL1050AGQ | JMPL1050AG | JMPL1050AE | JMPF8N60BJ | JMPF840BJ | JMPF7N65BJ
Popular searches
2n3905 | mj15023 | tip36c transistor | 2sc3320 | 2sc2078 | ac127 transistor | a42 transistor | bc547c