AG10N60S Datasheet. Specs and Replacement

Type Designator: AG10N60S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 69 nS

Cossⓘ - Output Capacitance: 166 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO-263AB

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AG10N60S datasheet

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Detailed specifications: AS4375, AS4435S, AS4606BS, AS60N20S, AS8205M, AT10N60S, AF10N60S, AK10N60S, 8205A, AT10N65S, AF10N65S, AK10N65S, AG10N65S, AT12N65S, AF12N65S, AK12N65S, AG12N65S

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