AK10N65S Specs and Replacement
Type Designator: AK10N65S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 74 nS
Cossⓘ - Output Capacitance: 166 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-262AB
AK10N65S substitution
AK10N65S datasheet
Detailed specifications: AS60N20S , AS8205M , AT10N60S , AF10N60S , AK10N60S , AG10N60S , AT10N65S , AF10N65S , IRFB4115 , AG10N65S , AT12N65S , AF12N65S , AK12N65S , AG12N65S , AT14N15S , AT7N65S , AU10N65S .
History: IXTY1R4N100P | JMSL1006AGQ | AM7401P | PMZ1200UPE | FDH3632 | 2SK1827
Keywords - AK10N65S MOSFET specs
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AK10N65S substitution
AK10N65S replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IXTY1R4N100P | JMSL1006AGQ | AM7401P | PMZ1200UPE | FDH3632 | 2SK1827
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