AK10N65S Datasheet. Specs and Replacement

Type Designator: AK10N65S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 74 nS

Cossⓘ - Output Capacitance: 166 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO-262AB

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AK10N65S datasheet

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AK10N65S

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AK10N65S

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Detailed specifications: AS60N20S, AS8205M, AT10N60S, AF10N60S, AK10N60S, AG10N60S, AT10N65S, AF10N65S, IRFB4115, AG10N65S, AT12N65S, AF12N65S, AK12N65S, AG12N65S, AT14N15S, AT7N65S, AU10N65S

Keywords - AK10N65S MOSFET specs

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