AG10N65S Specs and Replacement
Type Designator: AG10N65S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 74 nS
Cossⓘ - Output Capacitance: 166 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO-263AB
AG10N65S substitution
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AG10N65S datasheet
Detailed specifications: AS8205M, AT10N60S, AF10N60S, AK10N60S, AG10N60S, AT10N65S, AF10N65S, AK10N65S, 2N7000, AT12N65S, AF12N65S, AK12N65S, AG12N65S, AT14N15S, AT7N65S, AU10N65S, AU2N60S
Keywords - AG10N65S MOSFET specs
AG10N65S cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: AOL1712
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