AG4N60S Specs and Replacement
Type Designator: AG4N60S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 106 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
Package: TO-263AB
AG4N60S substitution
- MOSFET ⓘ Cross-Reference Search
AG4N60S datasheet
Detailed specifications: AF2N60S, AK2N60S, AG2N60S, AU4N60S, AD4N60S, AT4N60S, AF4N60S, AK4N60S, SKD502T, AU4N65S, AD4N65S, AT4N65S, AF4N65S, AK4N65S, AG4N65S, AU5N60S, AD5N60S
Keywords - AG4N60S MOSFET specs
AG4N60S cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IPB47N10S-33
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