AG4N65S Specs and Replacement
Type Designator: AG4N65S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 106 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 70 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.6 Ohm
Package: TO-263AB
AG4N65S substitution
- MOSFET ⓘ Cross-Reference Search
AG4N65S datasheet
Detailed specifications: AF4N60S, AK4N60S, AG4N60S, AU4N65S, AD4N65S, AT4N65S, AF4N65S, AK4N65S, IRF1010E, AU5N60S, AD5N60S, AT5N60S, AF5N60S, AK5N60S, AG5N60S, AU5N65S, AD5N65S
Keywords - AG4N65S MOSFET specs
AG4N65S cross reference
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AG4N65S replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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