AF8N60S Datasheet. Specs and Replacement

Type Designator: AF8N60S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60.5 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-220F

AF8N60S substitution

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AF8N60S datasheet

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 au8n60s ad8n60s at8n60s af8n60s ak8n60s ag8n60s.pdf pdf_icon

AF8N60S

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Detailed specifications: AD7N60S, AT7N60S, AF7N60S, AK7N60S, AG7N60S, AU8N60S, AD8N60S, AT8N60S, IRF520, AK8N60S, AG8N60S, 100N10NF, 10N50TF, 11N65GS, 11N65TFS, 12N60B, 12N60H

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