12N60B Specs and Replacement
Type Designator: 12N60B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 155 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ -
Output Capacitance: 180 max pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO263
- MOSFET ⓘ Cross-Reference Search
12N60B datasheet
0.3. Size:71K ixys
ixga12n60b ixgp12n60b.pdf 
IXGA 12N60B VCES = 600 V HiPerFASTTM IGBT IXGP 12N60B IC25 = 24 A VCE(sat) = 2.1 V tfi(typ) = 120 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-220 AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G E VGEM Transient 30 V IC25 TC = 25 C24 A IC90 TC = 90 C12 A TO-263 AA (IXGA) ICM TC =... See More ⇒
0.4. Size:34K ixys
ixgh12n60bd1.pdf
IXGH 12N60BD1 HiPerFASTTM IGBT VDSS = 600 V ID25 = 24 A VCE(sat) = 2.1 V tfi(typ) = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V C (TAB) VGEM Transient 30 V G C IC25 TC = 25 C24 A E IC90 TC = 90 C12 A ICM TC = 25 C, 1 ms 48 A G = Gate, C = Collect... See More ⇒
0.5. Size:33K ixys
ixgh12n60b.pdf
HiPerFASTTM IGBT IXGH 12N60B VDSS = 600 V ID25 = 24 A VCE(SAT) = 2.1 V tfi(typ) = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V VGES Continuous 20 V C (TAB) VGEM Transient 30 V G C IC25 TC = 25 C24 A E IC90 TC = 90 C12 A ICM TC = 25 C, 1 ms 48 A G = Gate, C = Collector, ... See More ⇒
0.6. Size:69K ixys
ixgp12n60b.pdf
IXGA 12N60B VCES = 600 V HiPerFASTTM IGBT IXGP 12N60B IC25 = 24 A VCE(sat) = 2.1 V tfi(typ) = 120 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings TO-220 AB (IXGP) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) VGES Continuous 20 V G E VGEM Transient 30 V IC25 TC = 25 C24 A IC90 TC = 90 C12 A TO-263 AA (IXGA) ICM TC =... See More ⇒
0.7. Size:1207K jilin sino
jcs12n60ct jcs12n60ft jcs12n60st jcs12n60bt.pdf
N R N-CHANNEL MOSFET JCS12N60T Package MAIN CHARACTERISTICS ID 12.0A VDSS 600 V Rdson-max 0.65 @Vgs=10V Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L... See More ⇒
0.8. Size:310K cystek
mtn12n60bfp.pdf
Spec. No. C164FP Issued Date 2015.03.04 CYStech Electronics Corp. Revised Date Page No. 1/9 N-Channel Enhancement Mode Power MOSFET BVDSS 600V RDS(ON) 0.46 typ. MTN12N60BFP ID 12A Description The MTN12N60BFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc... See More ⇒
0.9. Size:1002K jiejie micro
jmpf12n60bj.pdf
JMPF12N60BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 600V, 12A Load Switch RDS(ON) ... See More ⇒
0.10. Size:1045K jiejie micro
jmpc12n60bj.pdf
JMPC12N60BJ Description JMP N-channel Enhancement Mode Power MOSFET Features Applications 600V, 12A Load Switch RDS(ON) ... See More ⇒
Detailed specifications: AT8N60S
, AF8N60S
, AK8N60S
, AG8N60S
, 100N10NF
, 10N50TF
, 11N65GS
, 11N65TFS
, 75N75
, 12N60H
, 12N65
, 12N65F
, 12N65B
, 12N65H
, 12N65TF
, 13N50MF
, 150N06Y
.
History: 16N65MF
Keywords - 12N60B MOSFET specs
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