All MOSFET. 12N60B Datasheet

 

12N60B Datasheet and Replacement


   Type Designator: 12N60B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 155 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28 nS
   Cossⓘ - Output Capacitance: 180(max) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO263
 

 12N60B substitution

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12N60B Datasheet (PDF)

 ..1. Size:953K  chongqing pingwei
 12n60 12n60f 12n60b 12n60h.pdf pdf_icon

12N60B

 0.1. Size:271K  1
 hgtp12n60b3 hgt1s12n60b3 hgt1s12n60b3s.pdf pdf_icon

12N60B

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12N60B

 0.3. Size:71K  ixys
 ixga12n60b ixgp12n60b.pdf pdf_icon

12N60B

IXGA 12N60B VCES = 600 VHiPerFASTTM IGBTIXGP 12N60B IC25 = 24 AVCE(sat) = 2.1 Vtfi(typ) = 120 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-220 AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGEVGEM Transient 30 VIC25 TC = 25C24 AIC90 TC = 90C12 ATO-263 AA (IXGA)ICM TC =

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Datasheet: AT8N60S , AF8N60S , AK8N60S , AG8N60S , 100N10NF , 10N50TF , 11N65GS , 11N65TFS , IRF520 , 12N60H , 12N65 , 12N65F , 12N65B , 12N65H , 12N65TF , 13N50MF , 150N06Y .

History: IXFT30N60X | APQ84SN06A

Keywords - 12N60B MOSFET datasheet

 12N60B cross reference
 12N60B equivalent finder
 12N60B lookup
 12N60B substitution
 12N60B replacement

 

 
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