12N60B Datasheet and Replacement

IXGA 12N60B VCES = 600 VHiPerFASTTM IGBTIXGP 12N60B IC25 = 24 AVCE(sat) = 2.1 Vtfi(typ) = 120 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-220 AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGEVGEM Transient 30 VIC25 TC = 25C24 AIC90 TC = 90C12 ATO-263 AA (IXGA)ICM TC =

IXGH 12N60BD1HiPerFASTTM IGBTVDSS = 600 VID25 = 24 AVCE(sat) = 2.1 Vtfi(typ) = 120 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VC (TAB)VGEM Transient 30 VGCIC25 TC = 25C24 A EIC90 TC = 90C12 AICM TC = 25C, 1 ms 48 AG = Gate, C = Collect

HiPerFASTTM IGBT IXGH 12N60BVDSS = 600 V ID25 = 24 A VCE(SAT) = 2.1 Vtfi(typ) = 120 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-247VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VC (TAB)VGEM Transient 30 VGCIC25 TC = 25C24 A EIC90 TC = 90C12 AICM TC = 25C, 1 ms 48 AG = Gate, C = Collector,

IXGA 12N60B VCES = 600 VHiPerFASTTM IGBTIXGP 12N60B IC25 = 24 AVCE(sat) = 2.1 Vtfi(typ) = 120 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-220 AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGEVGEM Transient 30 VIC25 TC = 25C24 AIC90 TC = 90C12 ATO-263 AA (IXGA)ICM TC =

N RN-CHANNEL MOSFET JCS12N60T Package MAIN CHARACTERISTICS ID 12.0A VDSS 600 V Rdson-max 0.65 @Vgs=10V Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L

Spec. No. : C164FP Issued Date : 2015.03.04 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS :600V RDS(ON) : 0.46 typ. MTN12N60BFP ID : 12A Description The MTN12N60BFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc