12N60B Datasheet and Replacement
Type Designator: 12N60B
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 155
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id| ⓘ - Maximum Drain Current: 12
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 28
nS
Cossⓘ -
Output Capacitance: 180(max)
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7
Ohm
Package:
TO263
-
MOSFET ⓘ Cross-Reference Search
12N60B Datasheet (PDF)
0.3. Size:71K ixys
ixga12n60b ixgp12n60b.pdf 
IXGA 12N60B VCES = 600 VHiPerFASTTM IGBTIXGP 12N60B IC25 = 24 AVCE(sat) = 2.1 Vtfi(typ) = 120 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-220 AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGEVGEM Transient 30 VIC25 TC = 25C24 AIC90 TC = 90C12 ATO-263 AA (IXGA)ICM TC =
0.4. Size:34K ixys
ixgh12n60bd1.pdf
IXGH 12N60BD1HiPerFASTTM IGBTVDSS = 600 VID25 = 24 AVCE(sat) = 2.1 Vtfi(typ) = 120 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-247 ADVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VC (TAB)VGEM Transient 30 VGCIC25 TC = 25C24 A EIC90 TC = 90C12 AICM TC = 25C, 1 ms 48 AG = Gate, C = Collect
0.5. Size:33K ixys
ixgh12n60b.pdf
HiPerFASTTM IGBT IXGH 12N60BVDSS = 600 V ID25 = 24 A VCE(SAT) = 2.1 Vtfi(typ) = 120 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-247VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VVGES Continuous 20 VC (TAB)VGEM Transient 30 VGCIC25 TC = 25C24 A EIC90 TC = 90C12 AICM TC = 25C, 1 ms 48 AG = Gate, C = Collector,
0.6. Size:69K ixys
ixgp12n60b.pdf
IXGA 12N60B VCES = 600 VHiPerFASTTM IGBTIXGP 12N60B IC25 = 24 AVCE(sat) = 2.1 Vtfi(typ) = 120 nsPreliminary data sheetSymbol Test Conditions Maximum Ratings TO-220 AB (IXGP)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VC (TAB)VGES Continuous 20 VGEVGEM Transient 30 VIC25 TC = 25C24 AIC90 TC = 90C12 ATO-263 AA (IXGA)ICM TC =
0.7. Size:1207K jilin sino
jcs12n60ct jcs12n60ft jcs12n60st jcs12n60bt.pdf
N RN-CHANNEL MOSFET JCS12N60T Package MAIN CHARACTERISTICS ID 12.0A VDSS 600 V Rdson-max 0.65 @Vgs=10V Qg 39 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts LED based on half bridge L
0.8. Size:310K cystek
mtn12n60bfp.pdf
Spec. No. : C164FP Issued Date : 2015.03.04 CYStech Electronics Corp.Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFETBVDSS :600V RDS(ON) : 0.46 typ. MTN12N60BFP ID : 12A Description The MTN12N60BFP is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistanc
0.9. Size:1002K jiejie micro
jmpf12n60bj.pdf
JMPF12N60BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 600V, 12A Load SwitchRDS(ON)
0.10. Size:1045K jiejie micro
jmpc12n60bj.pdf
JMPC12N60BJDescriptionJMP N-channel Enhancement Mode Power MOSFETFeaturesApplications 600V, 12A Load SwitchRDS(ON)
Datasheet: AT8N60S
, AF8N60S
, AK8N60S
, AG8N60S
, 100N10NF
, 10N50TF
, 11N65GS
, 11N65TFS
, IRF520
, 12N60H
, 12N65
, 12N65F
, 12N65B
, 12N65H
, 12N65TF
, 13N50MF
, 150N06Y
.
History: 80N06-251
| PJE8405
Keywords - 12N60B MOSFET datasheet
12N60B cross reference
12N60B equivalent finder
12N60B lookup
12N60B substitution
12N60B replacement
