4N65H PDF and Equivalents Search

 

4N65H Specs and Replacement

Type Designator: 4N65H

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 70 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 45 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO262

4N65H substitution

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4N65H datasheet

 ..1. Size:868K  chongqing pingwei
 4n65 4n65f 4n65b 4n65h 4n65g 4n65d.pdf pdf_icon

4N65H

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 0.1. Size:239K  kia
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4N65H

4.0A650V N-CHANNELMOSFET 4N65H KIA KIA KIA SEMICONDUCTORS SEMICONDUCTORS SEMICONDUCTORS 1. Description This Power MOSFET is produced using KIA advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes... See More ⇒

Detailed specifications: 18N50MF, 20N65NF, 25N06G, 47N60YS, 4N60B, 4N60H, 4N65F, 4N65B, AO4407A, 4N65G, 4N65D, 4N65TF, 50N06B, 50N06H, 50N06D, 5N65GS, 5N70GS

Keywords - 4N65H MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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