All MOSFET. 4N65H Datasheet

 

4N65H Datasheet and Replacement


   Type Designator: 4N65H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO262
 

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4N65H Datasheet (PDF)

 ..1. Size:868K  chongqing pingwei
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4N65H

 0.1. Size:239K  kia
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4N65H

4.0A650VN-CHANNELMOSFET4N65HKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. DescriptionThis Power MOSFET is produced using KIA advanced planar stripe DMOS technology. Thisadvanced technology has been especially tailored to minimize on-state resistance, provide superiorswitching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes

Datasheet: 18N50MF , 20N65NF , 25N06G , 47N60YS , 4N60B , 4N60H , 4N65F , 4N65B , AO4407A , 4N65G , 4N65D , 4N65TF , 50N06B , 50N06H , 50N06D , 5N65GS , 5N70GS .

History: SI2101 | BUZ384 | 2SJ669

Keywords - 4N65H MOSFET datasheet

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