4N65D Datasheet and Replacement

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF4N65DN- MOS / N-CHANNEL POWER MOSFET SIF4N65DN- MOS / N-CHANN

Shenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationShenzhen SI Semiconductors Co., LTD. Product SpecificationN- MOS / N-CHANNEL POWER MOSFET SIF4N65DN- MOS / N-CHANNEL POWER MOSFET SIF4N65DN- MOS / N-CHANN

SVF4N65F/M/MJ/D 4A650V N 2SVF4N65F/M/MJ/D N MOS F-CellTM VDMOS 1 31. 2.

SVF4N65F/M/MJ/D 4A650V N SVF4N65F/M/MJ/D N MOS F-CellTM VDMOS AC-DC

SVF4N65T/F/M/MJ/D/K 4A650V N SVF4N65T/F/M/MJ/D/K N MOS F-CellTM VDMOS

SVF4N65T/F/M/MJ/D/K 4A650V N 2SVF4N65T/F/M/MJ/D/K N MOS 123 F-CellTM VDMOS TO-251J-3L13

MDFS4N65D N-Channel MOSFET 650V, 4.0A, 2.55General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChips MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.55 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Spe

N N-CHANNEL MOSFET FHU4N65D/FHD4N65D/FHP4N65D/FHF4N65D MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 2.4 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested

SINGLEFIG.SINGLE CURVE FIG. 2 NON-T1 FORWARD CURRENTAMBIENT1 2MAXIMUM5 101 25 50 PHASE HALF WAVE 60Hz () 150 175 0.00 0.2 0.4 0.6 4 TEMPERATURE DERATING 100 75 10 20 100 125HY4N65D / HY4N65M 650V / 4A650V, RDS(ON)=2.8W@VGS=10V, ID=2AN-Channel Enhancement Mode MOSFETFeaturesTO-252 TO-251 Low On-State Resistance Fast Switching Low Gate Cha

SW4N65DB N-channel Enhanced mode TO-251 MOSFET TO-251 BVDSS : 650V Features ID : 4A High ruggedness RDS(ON) : 1.7 Low RDS(ON) (Typ 1.7)@VGS=10V Low Gate Charge (Typ 20nC) 2 Improved dv/dt Capability 1 2 100% Avalanche Tested 3 Application: LED, Charger, Adaptor 1. Gate 2. Drain 3. Source 1 3 General Description This power MO

SAMWIN SW4N65D N-channel TO-220F/TO-251N/TO-252/TO-251S MOSFET BVDSS : 650V Features TO-220F TO-251N TO-252 TO-251S ID : 4A High ruggedness RDS(ON) : 2.6 RDS(ON) (Max 2.6)@VGS=10V Gate Charge (Typ 18nC) Improved dv/dt Capability 1 1 1 2 100% Avalanche Tested 2 3 1 3 2 2 3 3 2 1. Gate 2. Drain 3. Source General Description 1 Thi

SW4N65DC N-channel Enhanced mode TO-251/TO-251N-S2 MOSFET TO-251 TO-251N-S2 BVDSS : 650V Features ID : 4A High ruggedness RDS(ON) : 1.95 Low RDS(ON) (Typ 1.95)@VGS=10V Low Gate Charge (Typ 17nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 1 2 3 3 Application: Charger,TV-POWER 1. Gate 2. Drain 3. Source 3 Gener

SW4N65DD N-channel Enhanced mode TO-251N/TO-251N-S2/TO-220F/TO-220SF /TO-252/TO-220FTN MOSFET Features TO251N TO251N-S2 TO220F TO220SF TO252 TO220FTN BVDSS : 650V High ruggedness ID : 4A Low RDS(ON) (Typ 2.4)@VGS=10V RDS(ON) : 2.4 Low Gate Charge (Typ 16nC) 1 Improved dv/dt Capability 2 1 1 1 2 1 1 3 2 100% Avalanche Tested 2

SW4N65DAN-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-251NX-S4 MOSFETFeaturesBVDSS : 650VTO-220F TO-251N TO-252 TO-251NX-S4ID : 4A High ruggedness Low RDS(ON) (Typ 3.35)@VGS=10VRDS(ON) :3.35 Low Gate Charge (Typ 13nC) Improved dv/dt Capability D1 100% Avalanche Tested 1 1122 223 Application: Charger, Adaptor, 333LED, TV-Pow

SW4N65D SW4N65D N-channel Enhanced mode TO-220F/TO-251N/TO-251S/TO-251M/TO-251U/ TO-252/SOT-82/TO-263 /TO-220/TO-251MQ MOSFET Features TO-220F TO-251M TO-251U TO-251N TO-251S BVDSS : 650V High ruggedness ID : 4A Low RDS(ON) (Typ 2)@VGS=10V 1 1 1 1 1 2 2 2 Low Gate Charge (Typ 18nC) 2 RDS(ON) : 2 3 2 3 3 3 3 Improved dv/d

SL4N65N-CHANNEL MOSFET MAIN CHARACTERISTICS4AID650VVDSS2.6R V =10VDS(ON) GS18nCQGAPPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED LED power suppliesFEATURES 1 Gate Low

QM04N65D 1 2011-03-14 - 1 -N-Ch 650V Fast Switching MOSFETsGeneral Description Product SummeryThe QM04N65D is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 2.6 4Amost of the synchronous buck converterapplications . Applications The QM04N65D meet the RoHS and G

WMAA4N65D1B WMK4N65D1BWML4N65D1B WMO4N65D1B650V 4A 2.2 N-ch Power MOSFETDescriptionTO-220FTO-220WMOSTM D1 is Wayons 1st generationTABVDMOS family that is dramatic reductionin on-resistance and ultra-low gate chargefor applications requiring high powerG Gdensity and high efficiency. And it is very D DS Srobust and RoHS compliant.TO-252TO-251-L9.4TABFeatur

nvertSuzhou Convert Semiconductor Co ., Ltd.CS4N65F,CS4N65P,CS4N65U,CS4N65D650V N-Channel MOSFETFEATURES Fast switching 100% avalanche tested Improved dv/dt capabilityAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package MarkingCS4N65F TO-220F

FuXin Semiconductor Co., Ltd. FXN4N65D Series Rev.A General Description Features The FXN4N65D uses advanced Silicon s MOSFET Technology, which VDS = 650V provides high performance in on-state resistance, fast switching ID = 4A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

4N65 SeriesN-Channel MOSFET4A, 650V, N H FQU4N65C H4N65U U: TO-251 80 / 4Kpcs/ 24Kpcs HAOHAI4N65FQD4N65C H4N65D D: TO-252 25Kpcs 2.5K/ 5Kpcs/ 4N65 Series Pin Assignment3-Lead Plastic TO-251 DESCRIPTIONPackage Code: U The H4N65 is a high voltage power MOSFET designed to have betterPin 1: Gatecharacteristics,