4N65D - описание и поиск аналогов

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N65D N- MOS / N-CHANNEL POWER MOSFET SIF4N65D N- MOS / N-CHANN

Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF4N65D N- MOS / N-CHANNEL POWER MOSFET SIF4N65D N- MOS / N-CHANN

SVF4N65T/F/M/MJ/D/K 4A 650V N 2 SVF4N65T/F/M/MJ/D/K N MOS 1 2 3 F-CellTM VDMOS TO-251J-3L 1 3

MDFS4N65D N-Channel MOSFET 650V, 4.0A, 2.55 General Description Features These N-channel MOSFET are produced using advanced VDS = 650V MagnaChip s MOSFET Technology, which provides low on- ID = 4.0A @ VGS = 10V state resistance, high switching performance and excellent RDS(ON) 2.55 @ VGS = 10V quality. Applications These devices are suitable device for SMPS, high Spe

N N-CHANNEL MOSFET FHU4N65D/FHD4N65D/FHP4N65D/FHF4N65D MAIN CHARACTERISTICS FEATURES ID 4A Low gate charge VDSS 650V Crss ( 17pF) Low Crss (typical 17pF ) Rdson-typ @Vgs=10V 2.4 Fast switching Qg-typ 13.3nC 100% 100% avalanche tested

SINGLE FIG.SINGLE CURVE FIG. 2 NON- T1 FORWARD CURRENT AMBIENT 1 2MAXIMUM5 10 1 25 50 PHASE HALF WAVE 60Hz ( ) 150 175 0.00 0.2 0.4 0.6 4 TEMPERATURE DERATING 100 75 10 20 100 125 HY4N65D / HY4N65M 650V / 4A 650V, RDS(ON)=2.8W@VGS=10V, ID=2A N-Channel Enhancement Mode MOSFET Features TO-252 TO-251 Low On-State Resistance Fast Switching Low Gate Cha

SW4N65DB N-channel Enhanced mode TO-251 MOSFET TO-251 BVDSS 650V Features ID 4A High ruggedness RDS(ON) 1.7 Low RDS(ON) (Typ 1.7 )@VGS=10V Low Gate Charge (Typ 20nC) 2 Improved dv/dt Capability 1 2 100% Avalanche Tested 3 Application LED, Charger, Adaptor 1. Gate 2. Drain 3. Source 1 3 General Description This power MO

SAMWIN SW4N65D N-channel TO-220F/TO-251N/TO-252/TO-251S MOSFET BVDSS 650V Features TO-220F TO-251N TO-252 TO-251S ID 4A High ruggedness RDS(ON) 2.6 RDS(ON) (Max 2.6 )@VGS=10V Gate Charge (Typ 18nC) Improved dv/dt Capability 1 1 1 2 100% Avalanche Tested 2 3 1 3 2 2 3 3 2 1. Gate 2. Drain 3. Source General Description 1 Thi

SW4N65DC N-channel Enhanced mode TO-251/TO-251N-S2 MOSFET TO-251 TO-251N-S2 BVDSS 650V Features ID 4A High ruggedness RDS(ON) 1.95 Low RDS(ON) (Typ 1.95 )@VGS=10V Low Gate Charge (Typ 17nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 1 2 3 3 Application Charger,TV-POWER 1. Gate 2. Drain 3. Source 3 Gener

SW4N65DD N-channel Enhanced mode TO-251N/TO-251N-S2/TO-220F/TO-220SF /TO-252/TO-220FTN MOSFET Features TO251N TO251N-S2 TO220F TO220SF TO252 TO220FTN BVDSS 650V High ruggedness ID 4A Low RDS(ON) (Typ 2.4 )@VGS=10V RDS(ON) 2.4 Low Gate Charge (Typ 16nC) 1 Improved dv/dt Capability 2 1 1 1 2 1 1 3 2 100% Avalanche Tested 2

SW4N65DA N-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-251NX-S4 MOSFET Features BVDSS 650V TO-220F TO-251N TO-252 TO-251NX-S4 ID 4A High ruggedness Low RDS(ON) (Typ 3.35 )@VGS=10V RDS(ON) 3.35 Low Gate Charge (Typ 13nC) Improved dv/dt Capability D 1 100% Avalanche Tested 1 1 1 2 2 2 2 3 Application Charger, Adaptor, 3 3 3 LED, TV-Pow

SW4N65D SW4N65D N-channel Enhanced mode TO-220F/TO-251N/TO-251S/TO-251M/TO-251U/ TO-252/SOT-82/TO-263 /TO-220/TO-251MQ MOSFET Features TO-220F TO-251M TO-251U TO-251N TO-251S BVDSS 650V High ruggedness ID 4A Low RDS(ON) (Typ 2 )@VGS=10V 1 1 1 1 1 2 2 2 Low Gate Charge (Typ 18nC) 2 RDS(ON) 2 3 2 3 3 3 3 Improved dv/d

SL4N65 N-CHANNEL MOSFET MAIN CHARACTERISTICS 4A I D 650V V DSS 2.6 R V =10V DS(ON) GS 18nC Q G APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED LED power supplies FEATURES 1 Gate Low

QM04N65D 1 2011-03-14 - 1 - N-Ch 650V Fast Switching MOSFETs General Description Product Summery The QM04N65D is the highest performance N-ch MOSFETs with extreme high cell density , which BVDSS RDSON ID provide excellent RDSON and gate charge for 650V 2.6 4A most of the synchronous buck converter applications . Applications The QM04N65D meet the RoHS and G

WMAA4N65D1B WMK4N65D1B WML4N65D1B WMO4N65D1B 650V 4A 2.2 N-ch Power MOSFET Description TO-220F TO-220 WMOSTM D1 is Wayon s 1st generation TAB VDMOS family that is dramatic reduction in on-resistance and ultra-low gate charge for applications requiring high power G G density and high efficiency. And it is very D D S S robust and RoHS compliant. TO-252 TO-251-L9.4 TAB Featur

nvert Suzhou Convert Semiconductor Co ., Ltd. CS4N65F,CS4N65P,CS4N65U,CS4N65D 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking CS4N65F TO-220F

FuXin Semiconductor Co., Ltd. FXN4N65D Series Rev.A General Description Features The FXN4N65D uses advanced Silicon s MOSFET Technology, which VDS = 650V provides high performance in on-state resistance, fast switching ID = 4A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

4N65 Series N-Channel MOSFET 4A, 650V, N H FQU4N65C H4N65U U TO-251 80 / 4Kpcs/ 24Kpcs HAOHAI 4N65 FQD4N65C H4N65D D TO-252 25Kpcs 2.5K/ 5Kpcs/ 4N65 Series Pin Assignment 3-Lead Plastic TO-251 DESCRIPTION Package Code U The H4N65 is a high voltage power MOSFET designed to have better Pin 1 Gate characteristics,

AP4N65DIY 650V N-Channel Enhancement Mode MOSFET Description The AP4N65D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system General Features VDS =650V,ID =4A RDS(

APJ14N65D (AP65R650) 650V N-Channel Enhancement Mode MOSFET Description The APJ14N65D is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 730V IDM