FKBA3004
MOSFET. Datasheet pdf. Equivalent
Type Designator: FKBA3004
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 46
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 58
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 12.6
nC
trⓘ - Rise Time: 12.2
nS
Cossⓘ -
Output Capacitance: 163
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085
Ohm
Package:
PRPAK5X6
FKBA3004
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FKBA3004
Datasheet (PDF)
..1. Size:596K 1
fkba3004.pdf
FKBA3004 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline 8.5m 30V 58A Advanced high cell density Trench technology PRPAK5X6 Pin Configuration Description The FKBA3004 is the high cell density trenched N-ch MOSF
..2. Size:596K fetek
fkba3004.pdf
FKBA3004 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline 8.5m 30V 58A Advanced high cell density Trench technology PRPAK5X6 Pin Configuration Description The FKBA3004 is the high cell density trenched N-ch MOSF
7.1. Size:597K 1
fkba3006.pdf
FKBA3006 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline 30V 5.5m 81A Advanced high cell density Trench technology PRPAK5X6 Pin Configuration Description The FKBA3006 is the high cell density trenched N-ch MOSF
7.2. Size:597K fetek
fkba3006.pdf
FKBA3006 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs Product Summary 100% EAS Guaranteed Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline 30V 5.5m 81A Advanced high cell density Trench technology PRPAK5X6 Pin Configuration Description The FKBA3006 is the high cell density trenched N-ch MOSF
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