FKBB3004 PDF and Equivalents Search

 

FKBB3004 Specs and Replacement

Type Designator: FKBB3004

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 46 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.8 nS

Cossⓘ - Output Capacitance: 163 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: PRPAK3X3

FKBB3004 substitution

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FKBB3004 datasheet

 ..1. Size:468K  1
 fkbb3004.pdf pdf_icon

FKBB3004

FKBB3004 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline Advanced high cell density Trench 9m 30V 46A technology PRPAK3X3 Pin Configuration Description The FKBB3004 is the high cell density trenched N-ch MOS... See More ⇒

 ..2. Size:468K  fetek
 fkbb3004.pdf pdf_icon

FKBB3004

FKBB3004 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline Advanced high cell density Trench 9m 30V 46A technology PRPAK3X3 Pin Configuration Description The FKBB3004 is the high cell density trenched N-ch MOS... See More ⇒

 7.1. Size:458K  1
 fkbb3002.pdf pdf_icon

FKBB3004

FKBB3002 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 5 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 30V 18m 28A technology Description PRPAK3X3 Pin Configuration The FKBB3002 is the high cell density trenched N-ch MOSFE... See More ⇒

 7.2. Size:458K  fetek
 fkbb3002.pdf pdf_icon

FKBB3004

FKBB3002 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 5 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 30V 18m 28A technology Description PRPAK3X3 Pin Configuration The FKBB3002 is the high cell density trenched N-ch MOSFE... See More ⇒

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Detailed specifications: 8N06G, 8N06D, M4N65TF, FS8205, FMD5N50E5, FKBA3004, FKBA3006, FKBB3002, IRFP260N, FKD3006, DM4N65E, DM4N65E-F, DM5N65E, DM5N65E-F, DM7N65C, DM7N65C-F, DM8N65C

Keywords - FKBB3004 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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