All MOSFET. FKBB3004 Datasheet

 

FKBB3004 Datasheet and Replacement


   Type Designator: FKBB3004
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 46 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10.8 nS
   Cossⓘ - Output Capacitance: 163 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: PRPAK3X3
 

 FKBB3004 substitution

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FKBB3004 Datasheet (PDF)

 ..1. Size:468K  1
fkbb3004.pdf pdf_icon

FKBB3004

FKBB3004 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline Advanced high cell density Trench 9m 30V 46A technology PRPAK3X3 Pin Configuration Description The FKBB3004 is the high cell density trenched N-ch MOS

 ..2. Size:468K  fetek
fkbb3004.pdf pdf_icon

FKBB3004

FKBB3004 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge BVDSS RDSON ID Excellent CdV/dt effect decline Advanced high cell density Trench 9m 30V 46A technology PRPAK3X3 Pin Configuration Description The FKBB3004 is the high cell density trenched N-ch MOS

 7.1. Size:458K  1
fkbb3002.pdf pdf_icon

FKBB3004

FKBB3002 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 5 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 30V 18m 28A technology Description PRPAK3X3 Pin Configuration The FKBB3002 is the high cell density trenched N-ch MOSFE

 7.2. Size:458K  fetek
fkbb3002.pdf pdf_icon

FKBB3004

FKBB3002 FETek Technology Corp. N-Ch 30V Fast Switching MOSFETs 5 100% EAS Guaranteed Product Summary Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline BVDSS RDSON ID Advanced high cell density Trench 30V 18m 28A technology Description PRPAK3X3 Pin Configuration The FKBB3002 is the high cell density trenched N-ch MOSFE

Datasheet: 8N06G , 8N06D , M4N65TF , FS8205 , FMD5N50E5 , FKBA3004 , FKBA3006 , FKBB3002 , 10N60 , FKD3006 , DM4N65E , DM4N65E-F , DM5N65E , DM5N65E-F , DM7N65C , DM7N65C-F , DM8N65C .

History: SIHB12N50C | IXFK52N60Q2

Keywords - FKBB3004 MOSFET datasheet

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